FDAF62N28
FDAF62N28 Datasheet
FDAF62N28 280V N-Channel MOSFET
| Part | Datasheet |
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FDAF62N28 |
FDAF62N28 (pdf) |
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| FDAF62N28 280V N-Channel MOSFET FDAF62N28 280V N-Channel MOSFET • 36A, 280V, RDS on = = 10 V • Low gate charge typical 77 nC • Low Crss typical 83 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability October 2006 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. TO-3PF FDAF Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FDAF62N28 280 36 22 144 ±30 1919 36 165 -55 to +150 300 Min. Max. Unit V A V mJ A mJ V/ns W/°C °C Package Marking and Ordering Information Device Marking FDAF62N28 Device FDAF62N28 Package TO-3PF Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 280V, VGS = 0V VDS = 224V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 18A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 18A Note 4 -- Ciss Input Capacitance VDS = 25V, VGS = 0V, |
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