FDPC1002S
FDPC1002S Datasheet
FDPC1002S Power Clip
| Part | Datasheet |
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FDPC1002S |
FDPC1002S (pdf) |
| PDF Datasheet Preview |
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| FDPC1002S Power Clip FDPC1002S Power Clip 25V Asymmetric Dual N-Channel MOSFET September 2012 Q1 N-Channel - Max rDS on = mΩ at VGS = V, ID = 12 A Q2 N-Channel - Max rDS on = mΩ at VGS = V, ID = 24 A - Low inductance packaging shortens rise/fall times, resulting in lower switching losses - MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing - RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET Q1 and synchronous SyncFETTM Q2 have been designed to provide optimal power efficiency. - Computing - Communications - General Purpose Point of Load Pin 1 V+ LS Pin 1 V+ HSD PAD9 V+ HSD V+ HSG HSG SW LSG SW PAD10 GND SW GND LSS GND SW mm x mm Bottom V+ LSG GND MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Characteristics TC = 25 °C TA = 25 °C Note 3 TA = 25 °C TA = 25 °C 20 131a 60 271b 21 1.61a 0.81c 97 2.01b 0.91d -55 to +150 Units V mJ W °C Package Marking and Ordering Information 771a 1511c 631b 1351d °C/W Device Marking 13OD/15OD Device FDPC1002S Package Power Clip 33 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units 2012 Fairchild Semiconductor Corporation FDPC1002S Power Clip Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Type Min Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage ID = 250 uA, VGS = 0 V ID = 1 mA, VGS = 0 V Q1 25 Q2 25 Breakdown Voltage Temperature Coefficient ID = 250 uA, referenced to 25 °C Q1 ID = 10 mA, referenced to 25 °C Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V Q1 Q2 Gate to Source Leakage Current, VGS = 12 V/-8 V, VDS= 0 V Forward VGS = 12 V/-8 V, VDS= 0 V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 uA VGS = VDS, ID = 1 mA |
| More datasheets: CY7C65100-SC | 2381 574 11003 | 2381 574 10403 | 2381 574 12503 | 2381 574 10803 | 2381 574 11403 | 2381 574 11703 | 2381 574 10603 | 2381 574 12003 | 62-PMB-050-6-12 |
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