FDAF59N30

FDAF59N30 Datasheet

FDAF59N30 300V N-Channel MOSFET

Part	Datasheet
FDAF59N30	FDAF59N30 (pdf)

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FDAF59N30 300V N-Channel MOSFET FDAF59N30 300V N-Channel MOSFET • 34A, 300V, RDS on = = 10 V • Low gate charge typical 77 nC • Low Crss typical 80 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability October 2006 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. TO-3PF FDAF Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FDAF59N30 300 34 20 136 ±30 1734 34 161 -55 to +150 300 Min. Max. Unit V A V mJ A mJ V/ns W/°C °C Package Marking and Ordering Information Device Marking FDAF59N30 Device FDAF59N30 Package TO-3PF Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 300V, VGS = 0V VDS = 240V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 17A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 17A Note 4 -- Ciss Input Capacitance VDS = 25V, VGS = 0V,

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FDAF59N30 300V N-Channel MOSFET

FDAF59N30
300V N-Channel MOSFET
• 34A, 300V, RDS on = = 10 V
• Low gate charge typical 77 nC
• Low Crss typical 80 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

October 2006

UniFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

TO-3PF

FDAF Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C
- Pulsed

Note 1

Gate-Source voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation

TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FDAF59N30
300 34 20 136 ±30 1734 34 161 -55 to +150 300

Min.

Max.

Unit

V A V mJ A mJ V/ns W/°C °C
Package Marking and Ordering Information

Device Marking

FDAF59N30

Device

FDAF59N30

Package

TO-3PF

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Conditions

Min.

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

Breakdown Voltage Temperature Coefficient

ID = 250µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 300V, VGS = 0V

VDS = 240V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V

IGSSR

On Characteristics

VGS th

Gate Threshold Voltage

VDS = VGS, ID = 250µA

RDS on

Static Drain-Source On-Resistance

VGS = 10V, ID = 17A

Forward Transconductance

Dynamic Characteristics

VDS = 40V, ID = 17A

Note 4 --

Ciss

Input Capacitance

VDS = 25V, VGS = 0V,

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Datasheet ID: FDAF59N30 514035