MSA-0836-TR1G

MSA-0836-TR1G Datasheet

MSA-0836

Part	Datasheet
MSA-0836-TR1G	MSA-0836-TR1G (pdf)

Related Parts	Information
MSA-0836-BLKG	MSA-0836-BLKG

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MSA-0836 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet The MSA-0836 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose gain block above GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. • Usable Gain to GHz • High Gain dB Typical at GHz dB Typical at GHz • Low Noise Figure dB Typical at GHz • Cost Effective Ceramic Microstrip Package The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 36 micro-X Package Typical Biasing Configuration R bias VCC > 10 V C block IN 3 1 MSA RFC Optional C block Vd = V MSA-0836 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current 80 mA Power Dissipation [2,3] 750 mW RF Input Power +13 dBm Junction Temperature 150°C Storage Temperature[4] to 150°C Notes Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 69°C. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. Thermal Resistance[2,5] = 175°C/W Electrical Specifications[1], TA = 25°C Parameters and Test Conditions Id = 36 mA, ZO = 50 Power Gain \|S21\| 2 f = GHz f = GHz f = GHz VSWR Input VSWR Output VSWR Ordering Information Part Numbers No. of Devices MSA-0836-BLKG MSA-0836-TR1G 1000 Comments Bulk 7" Reel MSA-0836 Typical Scattering Parameters[1] ZO = 50 TA = 25°C, Id = 36 mA Freq. dB Mag Ang dB Mag Ang Mag Ang 161 55 145 47 119 54 103 55 92 53 82 52 64 51 48 44 39 42 26 36 175 14 32 162 2 27 Typical Performance, TA = 25°C unless otherwise noted 30 Gain Flat to DC G p dB FREQUENCY GHz Figure Typical Power Gain vs. Frequency, Id = 36 mA. Id mA 35 TC = +125°C TC = +25°C 30 TC = Figure Device Current vs. Voltage. G p dB 35 GHz 30 GHz 25 GHz 20 GHz GHz 10 I d mA Figure Power Gain vs. Current.

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MSA-0836

Cascadable Silicon Bipolar MMIC Amplifier

Data Sheet

The MSA-0836 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose gain block above GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
• Usable Gain to GHz
• High Gain dB Typical at GHz dB Typical at GHz
• Low Noise Figure dB Typical at GHz
• Cost Effective Ceramic Microstrip Package

The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
36 micro-X Package

Typical Biasing Configuration

R bias

VCC > 10 V

C block IN
3 1 MSA

RFC Optional

C block Vd = V

MSA-0836 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current
80 mA

Power Dissipation [2,3]
750 mW

RF Input Power
+13 dBm

Junction Temperature
150°C

Storage Temperature[4]
to 150°C

Notes Permanent damage may occur if any of these limits are exceeded.

TCASE = 25°C. Derate at mW/°C for TC > 69°C. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.

The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods.

Thermal Resistance[2,5] = 175°C/W

Electrical Specifications[1], TA = 25°C

Parameters and Test Conditions Id = 36 mA, ZO = 50

Power Gain |S21| 2
f = GHz f = GHz f = GHz

VSWR

Input VSWR Output VSWR
Ordering Information

Part Numbers No. of Devices

MSA-0836-BLKG

MSA-0836-TR1G
1000

Comments Bulk 7" Reel

MSA-0836 Typical Scattering Parameters[1] ZO = 50 TA = 25°C, Id = 36 mA

Freq.
dB Mag Ang
dB Mag Ang

Mag Ang
161 55
145 47
119 54
103 55
92 53
82 52
64 51
48 44
39 42
26 36
175 14 32
162 2 27

Typical Performance, TA = 25°C
unless otherwise noted
30 Gain Flat to DC

G p dB

FREQUENCY GHz

Figure Typical Power Gain vs. Frequency, Id = 36 mA.

Id mA
35 TC = +125°C TC = +25°C
30 TC =

Figure Device Current vs. Voltage.

G p dB
35 GHz
30 GHz
25 GHz
20 GHz

GHz 10

I d mA

Figure Power Gain vs. Current.

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Datasheet ID: MSA-0836-TR1G 520479