FJA4210RTU

FJA4210RTU Datasheet


FJA4210 PNP Epitaxial Silicon Transistor

Part Datasheet
FJA4210RTU FJA4210RTU FJA4210RTU (pdf)
Related Parts Information
FJA4210OTU FJA4210OTU FJA4210OTU
PDF Datasheet Preview
FJA4210 PNP Epitaxial Silicon Transistor

FJA4210

PNP Epitaxial Silicon Transistor
• Audio Power Amplifier
• High Current Capability IC= -10A
• High Power Dissipation
• Wide S.O.A
• Complement to FJA4310

October 2008

TO-3P
1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol VCBO VCEO VEBO IC IB PC TJ TSTG

Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Base Current DC Collector Dissipation TC=25°C Junction Temperature Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics* Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO

Collector-Base Breakdown Voltage

BVCEO

Collector-Emitter Breakdown Voltage

BVEBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current
* DC Current Gain

VCE sat

Collector-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product
* Pulse Test Pulse Duty

IC=-5mA, IE=0 IC=-50mA, IE=-5mA, IC=0 VCB=-200V, IE=0 VEB=-6V, IC=0 VCE=-4V, IC=-3A IC=-5A, IB=-0.5A VCB=-10V, f=1MHz VCE=-5V, IC=-1A
hFE Classification

Classification hFE

R 50 ~ 100

O 70 ~ 140

Ratings -200 -140 -6 -10 100 150
- 55 ~ 150

Units V A W °C °C

Min. -200 -140

Typ.
400 30
More datasheets: 2715B/C | 2715R/C | AIMB-564VG-00A1E | M3455 SL002 | M3455 SL001 | M3455 SL005 | 67-21/GBC-YV2W2N/2A0 | NX2520SA-40.000000MHZ-W3 | TOY0005 | FJA4210OTU


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJA4210RTU Datasheet file may be downloaded here without warranties.

Datasheet ID: FJA4210RTU 514690