FJA4210RTU
FJA4210RTU Datasheet
FJA4210 PNP Epitaxial Silicon Transistor
| Part | Datasheet |
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FJA4210RTU |
FJA4210RTU (pdf) |
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FJA4210OTU |
FJA4210OTU |
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| FJA4210 PNP Epitaxial Silicon Transistor FJA4210 PNP Epitaxial Silicon Transistor • Audio Power Amplifier • High Current Capability IC= -10A • High Power Dissipation • Wide S.O.A • Complement to FJA4310 October 2008 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Base Current DC Collector Dissipation TC=25°C Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current * DC Current Gain VCE sat Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product * Pulse Test Pulse Duty IC=-5mA, IE=0 IC=-50mA, IE=-5mA, IC=0 VCB=-200V, IE=0 VEB=-6V, IC=0 VCE=-4V, IC=-3A IC=-5A, IB=-0.5A VCB=-10V, f=1MHz VCE=-5V, IC=-1A hFE Classification Classification hFE R 50 ~ 100 O 70 ~ 140 Ratings -200 -140 -6 -10 100 150 - 55 ~ 150 Units V A W °C °C Min. -200 -140 Typ. 400 30 |
| More datasheets: 2715B/C | 2715R/C | AIMB-564VG-00A1E | M3455 SL002 | M3455 SL001 | M3455 SL005 | 67-21/GBC-YV2W2N/2A0 | NX2520SA-40.000000MHZ-W3 | TOY0005 | FJA4210OTU |
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