FDA79N15
FDA79N15 Datasheet
FDA79N15 150V N-Channel MOSFET
| Part | Datasheet |
|---|---|
FDA79N15 |
FDA79N15 (pdf) |
| PDF Datasheet Preview |
|---|
| FDA79N15 150V N-Channel MOSFET FDA79N15 150V N-Channel MOSFET • 79A, 150V, RDS on = = 10 V • Low gate charge typical 56 nC • Low Crss typical 96 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. TO-3PN FDA Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FDA79N15 150 79 50 316 ±30 1669 79 417 -55 to +150 Unit V A V mJ A mJ V/ns W/°C °C Min. Max. Unit Package Marking and Ordering Information Device Marking FDA79N15 Device FDA79N15 Package TO-3PN Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 150V, VGS = 0V VDS = 120V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 39.5A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 39.5A Note 4 -- Ciss Input Capacitance VDS = 25V, VGS = 0V, |
| More datasheets: B66337G0000X127 | B66337G0000X187 | B66337G0100X127 | B66337G1000X127 | B66337G0500X127 | B66337G0250X127 | 3575 | A000138 | 1185 | ADNK-7053-ND24 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDA79N15 Datasheet file may be downloaded here without warranties.