FDA2712
FDA2712 Datasheet
FDA2712 N-Channel UltraFET Trench MOSFET
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FDA2712 |
FDA2712 (pdf) |
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| FDA2712 N-Channel UltraFET Trench MOSFET FDA2712 N-Channel UltraFET Trench MOSFET 250V, 64A, 34mΩ April 2007 UltraFET • RDS on = 29.2mΩ = 10 V, ID = 40A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS on • High power and current handling capability • RoHS compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • PDP application TO-3PN MOSFET Maximum Ratings Symbol VDSS VGSS IDM EAS dv/dt TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous TC = 25oC -Continuous TC = 100oC - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate above 25oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Note 1 Note 2 Note 3 Ratings 250 ±30 64 44 240 245 357 -55 to +150 Ratings 40 Units V A mJ V/ns W W/oC Units oC/W 2007 Fairchild Semiconductor Corporation FDA2712 N-Channel UltraFET Trench MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDA2712 Device FDA2712 Package TO-3PN Reel Size N/A Tape Width N/A Quantity 30 Electrical Characteristics Parameter Test Conditions Min. Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250uA, VGS = 0V, TJ = 25oC ID = 250uA, Referenced to 25oC VDS = 250V VGS = 0V TJ = 125oC VGS = ±20V, VDS = 0V On Characteristics VGS th RDS on gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250uA VGS = 10V, ID = 40A VDS = 10V, ID = 40A Note 4 Dynamic Characteristics Ciss Coss Crss Qg Qgs Qgd VDS = 25V, VGS = 0V f = 1MHz VDS = 125V, ID = 80A VGS = 10V Note 4, 5 Switching Characteristics td on tr td off Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 125V, ID = 80A VGS = 10V, RGEN = 25Ω Note 4, 5 Drain-Source Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current |
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