T2525N038-6AQ

T2525N038-6AQ Datasheet

The IC T2525 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. Its function can be described using the block diagram see Figure The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier CGA , the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition ambient light, modulated lamps etc. . Other special features are used to adapt to the current application to secure best transmission quality. The T2525 operates in a supply-voltage range of V to V.

Part	Datasheet
T2525N038-6AQ	T2525N038-6AQ (pdf)

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• No External Components Except PIN Diode • Supply-voltage Range V to V • Automatic Sensitivity Adaptation AGC • Automatic Strong Signal Adaptation ATC • Enhanced Immunity Against Ambient Light Disturbances • Available for Carrier Frequencies between 30 kHz to 76 kHz Adjusted by Zener Diode Fusing • TTL and CMOS Compatible • Suitable Minimum Burst Length 6 or 10 Pulses/Burst • Audio Video Applications • Home Appliances • Remote Control Equipment The IC T2525 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. Its function can be described using the block diagram see Figure The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier CGA , the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition ambient light, modulated lamps etc. . Other special features are used to adapt to the current application to secure best transmission quality. The T2525 operates in a supply-voltage range of V to V. Figure Block Diagram IR Receiver ASSP T2525 IN Input CGA and filter Demodulator Microcontroller Carrier frequency f0 Modulated IR signal min 6/10 pulses Oscillator AGC/ATC and digital control Pin Configuration Figure Pinning SO8 and TSSOP8 VS 1 NC 2 OUT 3 NC 4 8 NC 7 NC 6 GND 5 IN Pin Description Function Supply voltage Not connected Data output Not connected Input PIN diode Ground Not connected Not connected Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Value Unit Supply voltage to +6 Supply current Input voltage to VS Input DC current at VS = 5 V Output voltage to VS Output current Operating temperature Tamb -25 to +85 Storage temperature Tstg -40 to +125 Notes Depending on version, see “Ordering Information” BER = Bit Error Rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage Electrical Characteristics Continued Tamb = 25°C, VS = 5 V unless otherwise specified. No. Parameters Test Conditions Min. Typ. Max. Unit Type* Test signal: see Figure 8 on page 7 VS = 5 V, Tamb = 25°C, Maximum detection IIN_DC = 1 µA; threshold current with square pp, VIN > 0V burst N = 16, f = f0 tPER = 10 ms, Figure 8 on page 7 BER = 5% 2 IEemax -400 4 Controlled Amplifier and Filter Maximum value of variable gain CGA GVARMAX Minimum value of variable gain CGA GVARMIN Total internal amplification 3 GMAX Center frequency fusing accuracy of bandpass VS = 5 V, Tamb = 25°C f0_FUSE Overall accuracy center frequency of bandpass BPF bandwidth type N0 - N3 -3 dB f0 = 38 kHz see Figure 6 on page 6 BPF bandwidth type N6, N7 -3 dB f0 = 38 kHz Figure 6 on page 6 * Type means A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes Depending on version, see “Ordering Information” BER = Bit Error Rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage All pins Þ 2000V HBM 200V MM, MIL-STD-883C, Method Reliability Electrical qualification 1000h in molded SO8 plastic package 4 T2525 Typical Electrical Curves at Tamb = 25°C Figure IEemin versus IIN_DC , VS = 5 V T2525 Figure VIN versus IIN_DC, VS = 5 V Figure Data Transmission Rate, VS = 5 V Figure Typical Bandpass Curve Q = f0/Df = -3 dB values. Example Q = - = 11 Figure Illustration of Used Terms 1066 µs Period P=16 533 µs Burst N=16 pulses tDON Data word 17 ms tDOFF Envelope 1 33 µs 533 µs 17056 µs/data word Telegram pause TREP = 62 ms Data word Example f = 30 kHz, burst with 16 pulses, 16 periods Envelope 16 t 6 T2525 Figure Test Circuit IEe = D U1/400K D U1 400k IIN_DC VDD = 5 V R1 = 220 VPULSE f0 IIN_AC100 20k 1 nF IIN IN VS T2525 OUT GND 16 tPER = 10 ms 20k + IIN_DC = DU2/40k DC Ordering Information Extended Type Number T2525N0xx 1 -yyy 5 RPU 3 30 D 4 2090 Type Standard type 10 pulses, enhanced sensibility, high data rate T2525N1xx 1 -DDW 2090 Standard type 10 pulses, enhanced sensibility, high data rate T2525N2xx 1 -yyy 5 1373 Lamp type 10 pulses, enhanced suppression of disturbances, secure data transmission T2525N3xx 1 -DDW 1373 Lamp type 10 pulses, enhanced suppression of disturbances, secure data transmission T2525N6xx 1 -yyy 5 3415 Short burst type 6 pulses, enhanced data rate T2525N7xx 1 -DDW 3415 Short burst type 6 pulses, enhanced data rate xx means the used carrier frequency value f0 30,33,36,38,40,44 ,56 kHz. 76 kHz type on request Two pad layout versions see Figure 11 and Figure 12 available for different assembly demand Integrated pull-up resistor at pin OUT see “Electrical Characteristics” Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V see Figure 5 on page 5 yyy means kind of packaging: .......DDW -> unsawn wafers in box .......6AQ -> only on request, TSSOP8 taped and reeled Pad Layout Figure Pad Layout 1 DDW only T2525 FUSING VS Figure Pad Layout 2 DDW, SO8 or TSSOP8 T2525 3 OUT FUSING Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel 41 26-426-5555 Fax 41 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel 852 2721-9778 Fax 852 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel 81 3-3523-3551 Fax 81 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 436-4314 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel 33 2-40-18-18-18 Fax 33 2-40-18-19-60 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel 33 4-42-53-60-00 Fax 33 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel 1 719 576-3300 Fax 1 719 540-1759

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• No External Components Except PIN Diode
• Supply-voltage Range V to V
• Automatic Sensitivity Adaptation AGC
• Automatic Strong Signal Adaptation ATC
• Enhanced Immunity Against Ambient Light Disturbances
• Available for Carrier Frequencies between 30 kHz to 76 kHz Adjusted by Zener Diode

Fusing
• TTL and CMOS Compatible
• Suitable Minimum Burst Length 6 or 10 Pulses/Burst
• Audio Video Applications
• Home Appliances
• Remote Control Equipment

The IC T2525 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. Its function can be described using the block diagram see Figure The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier CGA , the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition ambient light, modulated lamps etc. . Other special features are used to adapt to the current application to secure best transmission quality. The T2525 operates in a supply-voltage range of V to V.

Figure Block Diagram

IR Receiver ASSP

T2525

IN Input

CGA and filter

Demodulator

Microcontroller

Carrier frequency f0

Modulated IR signal min 6/10 pulses

Oscillator

AGC/ATC and digital control

Pin Configuration

Figure Pinning SO8 and TSSOP8

VS 1 NC 2 OUT 3 NC 4
8 NC 7 NC 6 GND 5 IN

Pin Description

Function Supply voltage Not connected Data output Not connected Input PIN diode Ground Not connected Not connected

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Parameters

Value

Unit

Supply voltage
to +6

Supply current

Input voltage
to VS

Input DC current at VS = 5 V

Output voltage
to VS

Output current

Operating temperature

Tamb
-25 to +85

Storage temperature

Tstg
-40 to +125
Notes Depending on version, see “Ordering Information” BER = Bit Error Rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage

Electrical Characteristics Continued

Tamb = 25°C, VS = 5 V unless otherwise specified.

No. Parameters

Test Conditions

Min.

Typ.

Max.

Unit Type*

Test signal:
see Figure 8 on page 7

VS = 5 V, Tamb = 25°C,

Maximum detection

IIN_DC = 1 µA;
threshold current with square pp,

VIN > 0V
burst N = 16,
f = f0 tPER = 10 ms, Figure 8 on page 7 BER = 5% 2

IEemax
-400
4 Controlled Amplifier and Filter

Maximum value of variable gain CGA

GVARMAX

Minimum value of variable gain CGA

GVARMIN

Total internal amplification 3

GMAX

Center frequency fusing accuracy of bandpass

VS = 5 V, Tamb = 25°C
f0_FUSE

Overall accuracy center frequency of bandpass

BPF bandwidth type N0 - N3
-3 dB f0 = 38 kHz see Figure 6 on page 6

BPF bandwidth type N6, N7
-3 dB f0 = 38 kHz Figure 6 on page 6
* Type means A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes Depending on version, see “Ordering Information” BER = Bit Error Rate e.g., BER = 5% means that with P = 20 at the input pin pulses can appear at the pin OUT After transformation of input current into voltage

All pins Þ 2000V HBM 200V MM, MIL-STD-883C, Method

Reliability

Electrical qualification 1000h in molded SO8 plastic package
4 T2525

Typical Electrical Curves at Tamb = 25°C

Figure IEemin versus IIN_DC , VS = 5 V

T2525

Figure VIN versus IIN_DC, VS = 5 V

Figure Data Transmission Rate, VS = 5 V

Figure Typical Bandpass Curve

Q = f0/Df = -3 dB values. Example Q = - = 11

Figure Illustration of Used Terms
1066 µs

Period P=16
533 µs

Burst N=16 pulses
tDON

Data word 17 ms
tDOFF Envelope 1
33 µs
533 µs
17056 µs/data word Telegram pause

TREP = 62 ms

Data word

Example f = 30 kHz, burst with 16 pulses, 16 periods

Envelope 16 t
6 T2525

Figure Test Circuit

IEe = D U1/400K D U1
400k

IIN_DC

VDD = 5 V R1 = 220

VPULSE
f0 IIN_AC100
20k 1 nF

IIN IN

VS T2525 OUT GND
16 tPER = 10 ms
20k +

IIN_DC = DU2/40k DC
Ordering Information

Extended Type Number

T2525N0xx 1 -yyy 5

RPU 3 30

D 4 2090

Type Standard type 10 pulses, enhanced sensibility, high data rate

T2525N1xx 1 -DDW
2090 Standard type 10 pulses, enhanced sensibility, high data rate

T2525N2xx 1 -yyy 5
1373

Lamp type 10 pulses, enhanced suppression of disturbances, secure data transmission

T2525N3xx 1 -DDW
1373

Lamp type 10 pulses, enhanced suppression of disturbances, secure data transmission

T2525N6xx 1 -yyy 5
3415 Short burst type 6 pulses, enhanced data rate

T2525N7xx 1 -DDW
3415 Short burst type 6 pulses, enhanced data rate
xx means the used carrier frequency value f0 30,33,36,38,40,44 ,56 kHz. 76 kHz type on request Two pad layout versions see Figure 11 and Figure 12 available for different assembly demand Integrated pull-up resistor at pin OUT see “Electrical Characteristics” Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V see Figure 5 on page 5 yyy means kind of packaging:
.......DDW -> unsawn wafers in box
.......6AQ -> only on request, TSSOP8 taped and reeled

Pad Layout

Figure Pad Layout 1 DDW only

T2525

FUSING VS

Figure Pad Layout 2 DDW, SO8 or TSSOP8

T2525
3 OUT

FUSING

Atmel Corporation
2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 487-2600

Regional Headquarters

Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel 41 26-426-5555 Fax 41 26-426-5500

Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel 852 2721-9778 Fax 852 2722-1369

Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel 81 3-3523-3551 Fax 81 3-3523-7581

Atmel Operations

Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 436-4314

Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel 1 408 441-0311 Fax 1 408 436-4314

La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel 33 2-40-18-18-18 Fax 33 2-40-18-19-60

ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel 33 4-42-53-60-00 Fax 33 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel 1 719 576-3300 Fax 1 719 540-1759

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Datasheet ID: T2525N038-6AQ 519391