FCB11N60FTM
FCB11N60FTM Datasheet
FCB11N60F 600V N-Channel MOSFET
| Part | Datasheet |
|---|---|
FCB11N60FTM |
FCB11N60FTM (pdf) |
| PDF Datasheet Preview |
|---|
| FCB11N60F 600V N-Channel MOSFET FCB11N60F 600V N-Channel MOSFET • 650V = 150°C • Typ. RDS on = • Fast Recovery Type trr = 120ns • Ultra low gate charge typ. Qg = 40nC • Low effective output capacitance typ. Coss.eff = 95pF • 100% avalanche tested • RoHS Compliant December 2008 SuperFET TM SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D2-PAK FCB Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount FCB11N60F 600 11 7 33 ± 30 340 11 50 125 -55 to +150 300 FCB11N60F Package Marking and Ordering Information Device Marking Device FCB11N60F FCB11N60FTM Package D2-PAK Reel Size 330mm Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA, TJ = 25°C VGS = 0V, ID = 250uA, TJ = 150°C Breakdown Voltage Temperature Coefficient ID = 250uA, Referenced to 25°C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 11A IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250uA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 5.5A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 5.5A Note 4 -- |
| More datasheets: GLC110-15G | GLC110-12G | GLC110-212G | GLC110-215G | GLC110-24G | GLC110-524G | RSE112067 | RSE112061 | RSE112065 | RSE112063 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FCB11N60FTM Datasheet file may be downloaded here without warranties.