FDA16N50

FDA16N50 Datasheet

FDA16N50 500V N-Channel MOSFET

Part	Datasheet
FDA16N50	FDA16N50 (pdf)

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FDA16N50 500V N-Channel MOSFET FDA16N50 500V N-Channel MOSFET • 16.5A, 500V, RDS on = = 10 V • Low gate charge typical 32 nC • Low Crss typical 20 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability April 2007 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. TO-3PN FDA Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDA16N50 500 66 ±30 780 205 -55 to +150 300 Unit V A V mJ A mJ V/ns W/°C °C Unit °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDA16N50 Device FDA16N50 FDA16N50_F109 Package TO-3PN TO-3PN Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA Breakdown Voltage Temperature Coefficient ID = 250uA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250uA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 8.3A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 8.3A Note 4 -- Ciss Input Capacitance VDS = 25V, VGS = 0V,

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FDA16N50 500V N-Channel MOSFET

FDA16N50
500V N-Channel MOSFET
• 16.5A, 500V, RDS on = = 10 V
• Low gate charge typical 32 nC
• Low Crss typical 20 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

April 2007

UniFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

TO-3PN

FDA Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C
- Pulsed

Note 1

Gate-Source voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation

TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient

FDA16N50
500 66 ±30 780 205 -55 to +150 300

Unit

V A V mJ A mJ V/ns W/°C °C

Unit
°C/W °C/W °C/W
Package Marking and Ordering Information

Device Marking

FDA16N50

Device

FDA16N50 FDA16N50_F109

Package

TO-3PN TO-3PN

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Conditions

Min.

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

Breakdown Voltage Temperature Coefficient

ID = 250uA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 500V, VGS = 0V

VDS = 400V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V

IGSSR

On Characteristics

VGS th

Gate Threshold Voltage

VDS = VGS, ID = 250uA

RDS on

Static Drain-Source On-Resistance

VGS = 10V, ID = 8.3A

Forward Transconductance

Dynamic Characteristics

VDS = 40V, ID = 8.3A

Note 4 --

Ciss

Input Capacitance

VDS = 25V, VGS = 0V,

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Datasheet ID: FDA16N50 514030