FDP13AN06A0

FDP13AN06A0 Datasheet

FDB13AN06A0 / FDP13AN06A0

Part	Datasheet
FDP13AN06A0	FDP13AN06A0 (pdf)

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FDB13AN06A0 / FDP13AN06A0 July 2003 FDB13AN06A0 / FDP13AN06A0 N-Channel MOSFET 60V, 62A, • rDS ON = Typ. , VGS = 10V, ID = 62A • Qg tot = 22nC Typ. , VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability Single Pulse and Repetitive Pulse • Qualified to AEC Q101 Formerly developmental type 82555 • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN FLANGE TO-220AB FDP SERIES SOURCE DRAIN GATE GATE SOURCE TO-263AB FDB SERIES DRAIN FLANGE MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 10V Continuous TA = 25oC, VGS = 10V, = 43oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 Note 2 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area Ratings 60 ±20 62 44 Figure 4 56 115 -55 to 175 62 43 Units V A mJ W/oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2003 Fairchild Semiconductor Corporation FDB13AN06A0 / FDP13AN06A0 Package Marking and Ordering Information Device Marking FDB13AN06A0 FDP13AN06A0 Device FDB13AN06A0 FDP13AN06A0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 62A, VGS = 10V ID = 31A, VGS = 6V ID = 62A, VGS = 10V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 30V ID = 62A Ig = 1.0mA Switching Characteristics VGS = 10V tON td ON Turn-On Time Turn-On Delay Time tr td OFF Rise Time Turn-Off Delay Time tf tOFF Fall Time Turn-Off Time VDD = 30V, ID = 62A VGS = 10V, RGS =

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FDB13AN06A0 / FDP13AN06A0

July 2003

FDB13AN06A0 / FDP13AN06A0

N-Channel MOSFET 60V, 62A,
• rDS ON = Typ. , VGS = 10V, ID = 62A
• Qg tot = 22nC Typ. , VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability Single Pulse and Repetitive Pulse
• Qualified to AEC Q101

Formerly developmental type 82555
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems

DRAIN FLANGE

TO-220AB FDP SERIES

SOURCE DRAIN GATE

GATE

SOURCE TO-263AB

FDB SERIES

DRAIN FLANGE

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS VGS

EAS PD

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 10V Continuous TA = 25oC, VGS = 10V, = 43oC/W Pulsed

Single Pulse Avalanche Energy Note 1

Power dissipation Derate above 25oC

TJ, TSTG Operating and Storage Temperature

Thermal Characteristics

Thermal Resistance Junction to Case TO-220,TO-263

Thermal Resistance Junction to Ambient TO-220,TO-263 Note 2 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area

Ratings 60 ±20
62 44 Figure 4 56 115 -55 to 175
62 43

Units V

A mJ W/oC
oC/W oC/W oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
2003 Fairchild Semiconductor Corporation

FDB13AN06A0 / FDP13AN06A0
Package Marking and Ordering Information

Device Marking FDB13AN06A0 FDP13AN06A0

Device FDB13AN06A0 FDP13AN06A0

Package TO-263AB TO-220AB

Reel Size 330mm Tube

Tape Width 24mm N/A

Quantity 800 units 50 units

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 50V VGS = 0V

TC = 150oC

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage
rDS ON

Drain to Source On Resistance

VGS = VDS, ID = 250µA ID = 62A, VGS = 10V ID = 31A, VGS = 6V ID = 62A, VGS = 10V, TJ = 175oC

Dynamic Characteristics

CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd

VDS = 25V, VGS = 0V, f = 1MHz

VGS = 0V to 10V

VGS = 0V to 2V

VDD = 30V ID = 62A Ig = 1.0mA

Switching Characteristics VGS = 10V
tON td ON

Turn-On Time Turn-On Delay Time
tr td OFF

Rise Time Turn-Off Delay Time
tf tOFF

Fall Time Turn-Off Time

VDD = 30V, ID = 62A VGS = 10V, RGS =

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Datasheet ID: FDP13AN06A0 514022