FCPF380N60-F152
FCPF380N60-F152 Datasheet
FCPF380N60_F152 N-Channel MOSFET
| Part | Datasheet |
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FCPF380N60-F152 |
FCPF380N60-F152 (pdf) |
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| FCPF380N60_F152 N-Channel MOSFET July 2013 FCPF380N60_F152 N-Channel II MOSFET 600 V, A, 380 mΩ • 650 V = 150°C • Max. RDS on = 380 mΩ • Ultra low gate charge typ. Qg = 30 nC • Low effective output capacitance typ. Coss.eff = 95 pF • 100% avalanche tested Aplications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-DC Power Supply MOSFET is Fairchild first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted Parameter VDSS VGSS ID IDM EAS IAR EAR dv/dt Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -AC -Continuous TC = 25oC -Continuous TC = 100oC - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation TC = 25oC - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink Typical Thermal Resistance, Junction to Ambient 2013 Fairchild Semiconductor Corporation f>1HZ Note 1 Note 2 Note 1 Note 1 Note 3 FCPF380N60_F152 600 ±20 ±30 20 100 31 -55 to +150 Unit V A mJ A mJ V/ns W/oC FCPF380N60_F152 4 Unit oC/W FCPF380N60_F152 N-Channel MOSFET Package Marking and Ordering Information Device Marking FCPF380N60 Device FCPF380N60_F152 Package TO-220F Eco Status Green Packaging Type Tube Quantity 50 For Fairchild's definition of "green" Eco Status, please visit: Electrical Characteristics TC = 25oC unless otherwise noted Parameter Test Conditions Min. Off Characteristics BVDSS BVDS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current VGS = 0V, ID = 10mA, TJ = 25°C VGS = 0V, ID = 10mA, TJ = 150°C ID = 10mA, Referenced to 25oC VGS = 0V, ID = 10A VDS = 480V, VGS = 0V VDS = 480V, TC = 125oC VGS = ±20V, VDS = 0V On Characteristics VGS th Gate Threshold Voltage VGS = VDS, ID = 250uA RDS on Static Drain to Source On Resistance VGS = 10V, ID = 5A Forward Transconductance VDS = 20V, ID = 5A Dynamic Characteristics Ciss Coss Crss Coss eff. Qg tot Qgs Qgd ESR VDS = 25V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 480V, VGS = 0V |
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