FDZ299P

FDZ299P Datasheet

FDZ299P

Part	Datasheet
FDZ299P	FDZ299P (pdf)

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FDZ299P February 2006 FDZ299P P-Channel V Specified BGA MOSFET Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS ON . • Battery management • Load switch • Battery protection • A, V RDS ON = 55 VGS = V RDS ON = 80 VGS = V • Occupies only mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package less than mm height when mounted to PCB • Outstanding thermal transfer characteristics 4 times better than SSOT-6 • Ultra-low Qg x RDS ON figure-of-merit • High power and current handling capability. GATE Bottom Bottom Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDZ299P 13” 2006 Fairchild Semiconductor Corporation Ratings ±12 to +150 Tape width 8mm Units W °C °C/W Quantity 10000 units Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Leakage. VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = ±12 V, VGS = 0 V VDS = 0 V V mV/°C ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on

PDF Datasheet Preview

FDZ299P

February 2006

FDZ299P

P-Channel V Specified BGA MOSFET

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS ON .
• Battery management
• Load switch
• Battery protection
• A, V

RDS ON = 55 VGS = V RDS ON = 80 VGS = V
• Occupies only mm2 of PCB area. Less than 50% of the area of a SSOT-6
• Ultra-thin package less than mm height when mounted to PCB
• Outstanding thermal transfer characteristics 4 times better than SSOT-6
• Ultra-low Qg x RDS ON figure-of-merit
• High power and current handling capability.

GATE

Bottom

Bottom

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation for Single Operation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDZ299P
13”
2006 Fairchild Semiconductor Corporation

Ratings
±12 to +150

Tape width 8mm

Units

W °C
°C/W

Quantity 10000 units

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Leakage.

VGS = 0 V,

ID = µA

ID = µA, Referenced to 25°C

VDS = V, VGS = ±12 V,

VGS = 0 V VDS = 0 V

V mV/°C
±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

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Datasheet ID: FDZ299P 514451