CNW83SD

CNW83SD Datasheet

The CNW82, CNW83, CNW84 and CNW85 optocouplers consist

Part	Datasheet
CNW83SD	CNW83SD (pdf)

Related Parts	Information
CNW83	CNW83
CNW85	CNW85
CNW84SD	CNW84SD
CNW84S	CNW84S
CNW84300	CNW84300
CNW84	CNW84
CNW83300	CNW83300
CNW85SD	CNW85SD
CNW82SD	CNW82SD
CNW82S	CNW82S
CNW82300	CNW82300
CNW82	CNW82
CNW85S	CNW85S
CNW83S	CNW83S
CNW85300	CNW85300

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WIDE BODY, HIGH ISOLATION OPTOCOUPLERS The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor. The CNW82 and CNW84 do not have the base pin connected for improved noise immunity. • Wide body DIL encapsulation, with a pin distance of mm. • Minimum creepage distance 10 mm. • High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits. • High degree of AC and DC insulation 5900 V RMS and 8340 V DC . • Minimum 2 mm isolation thickness between emitter and detector. CNW84/85 only . • An external clearance 0f mm minimum and an external creepage distance of 10 mm minimum. • Collector-Emitter Breakdown Voltage 50 V CNW82/83 only . • Collector-Emitter Breakdown Voltage 80 V CNW84/85 only . • UL recognized File # E90700 CNW82 CNW83 CNW84 CNW85 SCHEMATIC CNW82/84 PIN ANODE CATHODE NO CONNECTION EMITTER COLLECTOR NO CONNECTION CNW83/85 PIN ANODE CATHODE NO CONNECTION EMITTER COLLECTOR BASE ABSOLUTE MAXIMUM RATINGS Parameter EMITTER Forward Current - Continuous Forward Current - Peak PW = 100µs, 120pps Derate above 25°C DETECTOR Collector Current-Continuous Emitter-Collector Voltage Collector-Emitter Voltage CNW82/CNW83 CNW84/CNW85 Collector-Base Voltage CNW83 Total Power Dissipation TA = 25°C Derate above 25°C CNW85 TOTAL DEVICE Storage Temperature Range Ambient Operating Temperature Range Lead Soldering Temperature 1/16” from case, 10 sec. duration Symbol IF IF pk VR PD IC VECO VCEO VCBO

PDF Datasheet Preview

WIDE BODY, HIGH ISOLATION OPTOCOUPLERS

The CNW82, CNW83, CNW84 and CNW85 optocouplers consist
of a GaAs infrared emitting diode which is optically coupled to an

NPN phototransistor.

The CNW82 and CNW84 do not have the base pin connected for
improved noise immunity.
• Wide body DIL encapsulation, with a pin distance of mm.
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage,
making the device suitable for use with TTL integrated circuits.
• High degree of AC and DC insulation 5900 V RMS and 8340 V DC .
• Minimum 2 mm isolation thickness between emitter and detector. CNW84/85 only .
• An external clearance 0f mm minimum and an external creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage 50 V CNW82/83 only .
• Collector-Emitter Breakdown Voltage 80 V CNW84/85 only .
• UL recognized File # E90700

CNW82

CNW83

CNW84

CNW85

SCHEMATIC

CNW82/84

PIN ANODE CATHODE NO CONNECTION EMITTER COLLECTOR NO CONNECTION

CNW83/85

PIN ANODE CATHODE NO CONNECTION EMITTER COLLECTOR BASE

ABSOLUTE MAXIMUM RATINGS

Parameter

EMITTER

Forward Current - Continuous

Forward Current - Peak PW = 100µs, 120pps

Derate above 25°C

DETECTOR

Collector Current-Continuous

Emitter-Collector Voltage

Collector-Emitter Voltage

CNW82/CNW83 CNW84/CNW85

Collector-Base Voltage

CNW83

Total Power Dissipation TA = 25°C Derate above 25°C

CNW85

TOTAL DEVICE

Storage Temperature Range

Ambient Operating Temperature Range

Lead Soldering Temperature
1/16” from case, 10 sec. duration

Symbol IF

IF pk VR PD IC

VECO VCEO

VCBO

More datasheets: DM74ALS151N | DM74ALS151MX | DM74S182N | W181-01G | CNW83 | CNW85 | CNW84SD | CNW84S | CNW84300 | CNW84

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Datasheet ID: CNW83SD 513596