BUZ11_R4941

BUZ11_R4941 Datasheet

BUZ11

Part	Datasheet
BUZ11_R4941	BUZ11_R4941 (pdf)

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Data Sheet BUZ11 June 1999 File Number [ /Title BUZ1 1 /Subject 30A, 50V, Ohm, NChannel Power MOSFET /Autho r /Keywords Intersil Corporation, NChannel Power MOSFET, TO220AB /Creator /DOCI NFO pdfmark 30A, 50V, Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Ordering Information PACKAGE BRAND BUZ11 TO-220AB BUZ11 NOTE When ordering, use the entire part number. • 30A, 50V • rDS ON = • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE 2001 Fairchild Semiconductor Corporation BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise BUZ11 UNITS Drain to Source Breakdown Voltage Note 1 .VDS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current TC = 30oC. ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage .VGS Maximum Power Dissipation .PD Linear Derating Factor Operating and Storage Temperature TJ, TSTG DIN Humidity Category - DIN 40040 50 30 120 ±20 75 -55 to 150 E V A V W/oC IEC Climatic Category - DIN IEC 55/150/56 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 125oC. Electrical TC = 25oC, Unless Otherwise PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current TEST CONDITIONS BVDSS ID = 250µA, VGS = 0V V GS TH I DSS I GSS r DS ON VGS = VDS, ID = 1mA Figure 9 TJ = 25oC, VDS = 50V, VGS = 0V TJ = 125oC, VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V ID = 15A, VGS = 10V Figure 8 gfs t d ON VDS = 25V, ID = 15A Figure 11 VCC = 30V, ID 3A, VGS = 10V, RGS = RL = t d OFF tf C ISS VDS = 25V, VGS = 0V, f = 1MHz Figure 10 C OSS C RSS MIN TYP MAX UNITS

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Data Sheet

BUZ11

June 1999

File Number
[ /Title BUZ1 1 /Subject 30A, 50V, Ohm, NChannel Power MOSFET /Autho r /Keywords Intersil Corporation, NChannel Power MOSFET, TO220AB /Creator /DOCI NFO pdfmark
30A, 50V, Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Formerly developmental type TA9771.
Ordering Information

PACKAGE

BRAND

BUZ11

TO-220AB

BUZ11
NOTE When ordering, use the entire part number.
• 30A, 50V
• rDS ON =
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

JEDEC TO-220AB DRAIN FLANGE

SOURCE DRAIN GATE
2001 Fairchild Semiconductor Corporation

BUZ11

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

BUZ11

UNITS

Drain to Source Breakdown Voltage Note 1 .VDS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current TC = 30oC. ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage .VGS Maximum Power Dissipation .PD Linear Derating Factor

Operating and Storage Temperature TJ, TSTG DIN Humidity Category - DIN 40040
50 30 120 ±20 75 -55 to 150 E

V A V W/oC

IEC Climatic Category - DIN IEC
55/150/56

Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL

Package Body for 10s, See Techbrief 334 Tpkg

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 125oC.

Electrical

TC = 25oC, Unless Otherwise

PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

TEST CONDITIONS

BVDSS ID = 250µA, VGS = 0V

V GS TH I DSS

I GSS r DS ON

VGS = VDS, ID = 1mA Figure 9 TJ = 25oC, VDS = 50V, VGS = 0V TJ = 125oC, VDS = 50V, VGS = 0V

VGS = 20V, VDS = 0V

ID = 15A, VGS = 10V Figure 8
gfs t d ON

VDS = 25V, ID = 15A Figure 11

VCC = 30V, ID 3A, VGS = 10V, RGS = RL =
t d OFF tf

C ISS

VDS = 25V, VGS = 0V, f = 1MHz Figure 10

C OSS C RSS

MIN TYP MAX UNITS

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Datasheet ID: BUZ11_R4941 513541