495220TU
495220TU Datasheet
495220 NPN Epitaxial Silicon Darlington Transistor
| Part | Datasheet |
|---|---|
495220TU |
495220TU (pdf) |
| PDF Datasheet Preview |
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| 495220 NPN Epitaxial Silicon Darlington Transistor 495220 NPN Epitaxial Silicon Darlington Transistor High Voltage & Medium Power Linear Application Equivalent Circuit C April 2008 TO-220 Marking 495220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TC=25°C unless otherwise noted Parameter Value BVCBO Collector-Base Voltage BVCEO Collector-Emitter Voltage BVEBO Emitter-Base Voltage Collector Current DC Collector Current Pulse ** Base Current DC Collector Dissipation TC=25°C Junction Temperature TSTG Storage Junction Temperature Range - 55 ~ 150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test Pulse Width 5ms, Duty Cycle 10% Units V A W °C °C Electrical Characteristics * TC=25°C unless otherwise noted Parameter Test Condition BVCEO SUS Collector-Emitter Sustaining Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat |
| More datasheets: HSME-A100-N82J1 | HSML-A101-S00J1 | HSMA-A101-S3WJ1 | HSMM-A101-R00J1 | HSMM-A100-U4PJ1 | HSMA-A101-S00J1 | HSMA-A100-Q00J1 | HSMS-A100-J00J1 | HSMC-A100-Q00J1 | DFR0013 |
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