BSP51

BSP51 Datasheet

BSP51 NPN Darlington Transistor

Part	Datasheet
BSP51	BSP51 (pdf)

PDF Datasheet Preview
BSP51 NPN Darlington Transistor June 2007 BSP51 NPN Darlington Transistor This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process SOT-223 Base Collector Emitter Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter Value VCES VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Junction Temperature, Storage Temperature 80 90 500 -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics * Ta = 25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CBO V BR EBO ICES IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 100 uA, IE = 0 IE = 10 uA, IC = 0 VCE = 80 V, IBE = 0 VEB = V, IC = 0 On Characteristics VCE sat VBE sat DC Current Gain IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Collector-Emitter Saturation Voltage * IC = 500 mA, IB = mA Base-Emitter Saturation Voltage * IC = 500 mA, IB = mA * Pulse Test Pulse Duty 1000 2000 Units V mA °C MAX Units 2007 Fairchild Semiconductor Corporation BSP51 NPN Darlington Transistor Thermal Characteristics * Ta = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB X

PDF Datasheet Preview

BSP51 NPN Darlington Transistor

June 2007

BSP51

NPN Darlington Transistor

This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process

SOT-223 Base Collector Emitter

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

Parameter

Value

VCES VCBO VEBO IC TJ, TSTG

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Junction Temperature, Storage Temperature
80 90 500 -55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C.
2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics * Ta = 25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR CBO V BR EBO ICES IEBO

Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current

IC = 100 uA, IE = 0 IE = 10 uA, IC = 0 VCE = 80 V, IBE = 0 VEB = V, IC = 0

On Characteristics

VCE sat VBE sat

DC Current Gain

IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V

Collector-Emitter Saturation Voltage * IC = 500 mA, IB = mA

Base-Emitter Saturation Voltage *

IC = 500 mA, IB = mA
* Pulse Test Pulse Duty
1000 2000

Units

V mA °C

MAX Units
2007 Fairchild Semiconductor Corporation

BSP51 NPN Darlington Transistor

Thermal Characteristics * Ta = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above

Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB X

More datasheets: SLB1470 | SLB1280R5 | SLB1470R | SLB12804 | SLB12814 | SLB1370R | LPT83 | LPT82 | LPT81 | 70-841-018

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BSP51 Datasheet file may be downloaded here without warranties.

Datasheet ID: BSP51 513531