BF246A

BF246A Datasheet

BF246A N-Channel Amplifier

Part	Datasheet
BF246A	BF246A (pdf)

Related Parts	Information
BF246A_J35Z	BF246A_J35Z

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BF246A N-Channel Amplifier September 2007 BF246A N-Channel Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process TO-92 Gate Source Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 39 -30 10 -55 ~ +150 Max. 350 125 357 Units V mA °C Units mW/°C °C/W °C/W 2007 Fairchild Semiconductor Corporation BF246A N-Channel Amplifier Electrical Characteristics* Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR GSS IGSS VGS off VGS f VGS On Characteristics IDSS Zero-Gate Voltage Drain Current Small Signal Characteristics Forward Transferconductance * Pulse Test Pulse Width 300us, Duty Cycle = 2% IG = 1.0uA, VDS = 0 VGS = 15V, VDS = 0 VDS = 15V, ID = 100nA IG = 1.0mA VDS = 15V, ID = 0.2mA VDS = 15V, VGS = 0 VDS = 15V, VGS = 0V

PDF Datasheet Preview

BF246A N-Channel Amplifier

September 2007

BF246A N-Channel Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process

TO-92

Gate Source Drain

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

VDG VGS IGF TJ, TSTG

Parameter

Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics Ta=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Value
39 -30 10 -55 ~ +150

Max.
350 125 357

Units

V mA °C

Units
mW/°C °C/W °C/W
2007 Fairchild Semiconductor Corporation

BF246A N-Channel Amplifier

Electrical Characteristics* Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR GSS IGSS VGS off VGS f VGS

On Characteristics
*IDSS

Zero-Gate Voltage Drain Current *

Small Signal Characteristics

Forward Transferconductance
* Pulse Test Pulse Width 300us, Duty Cycle = 2%

IG = 1.0uA, VDS = 0 VGS = 15V, VDS = 0 VDS = 15V, ID = 100nA IG = 1.0mA VDS = 15V, ID = 0.2mA

VDS = 15V, VGS = 0

VDS = 15V, VGS = 0V

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Datasheet ID: BF246A 513524