BF244B

BF244B Datasheet

BF244A / BF244B / BF244C

Part	Datasheet
BF244B	BF244B (pdf)

Related Parts	Information
BF244A	BF244A
BF244C	BF244C
BF244C_J35Z	BF244C_J35Z
BF244B_J35Z	BF244B_J35Z
BF244A_J35Z	BF244A_J35Z

PDF Datasheet Preview
BF244A / BF244B / BF244C BF244A BF244B BF244C TO-92 N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current Tstg Storage Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 30 - 30 50 10 -55 to +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient BF244A / BF244B / BF244C 350 125 Units V mA °C Units mW /°C °C/W °C/W Fairchild Semiconductor Corporation BF244A / BF244B / BF244C N-Channel RF Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V BR GSS Gate-Source Breakdown Voltage IGSS

PDF Datasheet Preview

BF244A / BF244B / BF244C

BF244A BF244B BF244C

TO-92

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

Drain-Gate Voltage

Gate-Source Voltage

Drain Current

Forward Gate Current

Tstg

Storage Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
30 - 30 50 10 -55 to +150

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

BF244A / BF244B / BF244C 350 125

Units

V mA °C

Units
mW /°C °C/W °C/W

Fairchild Semiconductor Corporation

BF244A / BF244B / BF244C

N-Channel RF Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

OFF CHARACTERISTICS

V BR GSS

Gate-Source Breakdown Voltage

IGSS

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Datasheet ID: BF244B 513522