BF244B_J35Z
BF244B_J35Z Datasheet
BF244A / BF244B / BF244C
| Part | Datasheet |
|---|---|
BF244B_J35Z |
BF244B_J35Z (pdf) |
| Related Parts | Information |
|---|---|
|
BF244A |
BF244A |
|
BF244C |
BF244C |
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BF244B |
BF244B |
|
BF244C_J35Z |
BF244C_J35Z |
|
BF244A_J35Z |
BF244A_J35Z |
| PDF Datasheet Preview |
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| BF244A / BF244B / BF244C BF244A BF244B BF244C TO-92 N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current Tstg Storage Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 30 - 30 50 10 -55 to +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient BF244A / BF244B / BF244C 350 125 Units V mA °C Units mW /°C °C/W °C/W Fairchild Semiconductor Corporation BF244A / BF244B / BF244C N-Channel RF Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V BR GSS Gate-Source Breakdown Voltage IGSS |
| More datasheets: DM74LS251N | 411621B02500 | AHDF26A-KG-TAXB-R | AHDF15A-KG-TAXB | AHDF44A-KG-TAXB-R | AHDF62A-KG-TAXB-R | BF244A | BF244C | BF244B | BF244C_J35Z |
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