BD534/536/538
Part | Datasheet |
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BD534K (pdf) |
Related Parts | Information |
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BD538K |
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BD538KTU |
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BD534KTU |
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BD536J |
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BD534J |
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BD538J |
PDF Datasheet Preview |
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BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively TO-220 PNP Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter BD534 BD536 BD538 VCEO Collector-Emitter Voltage BD534 BD536 BD538 VEBO IC IB PC TJ TSTG Emitter-Base Voltage Collector Current DC Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO ICES IEBO hFE Parameter Collector Cut-off Current BD534 BD536 BD538 Collector Cut-off Current BD534 BD536 BD538 Emitter Cut-off Current * DC Current Gain ALL DEVICE BD534/536 BD538 BD534/536 BD538 Test Condition VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VEB = - 5V, IC = 0 VCE = -2 V, IC = - 500mA VCE = - 5V, IC = - 10mA VCE = - 2V, IC = - 2A hFE Groups ALL DEVICE ALL DEVICE VCE sat * Collector-Emitter Saturation Voltage VBE on * Base-Emitter ON Voltage Current Gain Bandwidth Product * Pulse Test PW =300µs, duty Cycle Pulsed VCE = - 2V, IC = - 2A VCE = - 2V, IC = - 3A VCE = -2V, IC = - 2A VCE = - 2V, IC = - 3A IC = - 2A, IB = - 0.2A IC = - 6A, IB = - 0.6A |
More datasheets: FQPF14N15 | 74AC821SCX | 74AC821SC | 74AC821SPC | BD538K | BD538KTU | BD534KTU | BD536J | BD534J | BD538J |
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