BCX79_J35Z
BCX79_J35Z Datasheet
BCX79
| Part | Datasheet |
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BCX79_J35Z |
BCX79_J35Z (pdf) |
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BCX79 |
BCX79 |
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| BCX79 BCX79 TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process See PN200A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCES Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 500 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient BCX79 625 Units V mA °C Units mW /°C °C/W °C/W 1997 Fairchild Semiconductor Corporation BCX79 PNP General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V BR CEO |
| More datasheets: CY7C09569V-83AXCT | CY7C09569V-83AXC | CY7C09579V-83AXI | CY7C09569V-100AC | ARK-1503F-D4A1E | ARK-1503P-D6A1E | CMLD6263 BK | 5616002100 | 5615902100 | 5611002100 |
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