BCW33
BCW33 Datasheet
BCW33
| Part | Datasheet |
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BCW33 |
BCW33 (pdf) |
| PDF Datasheet Preview |
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| BCW33 BCW33 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process SOT-23 Mark D3 Base Emitter Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector current DC TJ, Tstg Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value 32 500 -55 ~ +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CBO V BR CEO V BR EBO ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteristics IC = 2.0mA, IB = 0 IC = 10µA, IB = 0 IC = 10µA, IC = 0 VCB = 32V, IE = 0 VCB = 32V, IE = 0, TA = 100°C DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE on Base-Emitter On Voltage Small Signal Characteristics IC = 2.0mA, VCE = 5.0V IC = 10mA, IB = 0.5mA IC = 2.0mA, VCE = 5.0V Current Gain Bandwidth Product IC = 2.0mA, VCE = 5.0V |
| More datasheets: BXRE-35G1000-B-23 | BXRE-30G1000-B-23 | BXRE-40G1000-B-23 | BXRE-50C1000-B-24 | BXRE-27G1000-B-23 | BXRE-40E1000-B-23 | BXRE-27E1000-B-23 | 96-080M80 | 426058300-3 | BECNTVF19 |
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