BCW30
BCW30 Datasheet
BCW30
| Part | Datasheet |
|---|---|
BCW30 |
BCW30 (pdf) |
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| BCW30 BCW30 PNP General Purpose Amplifier • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300mA. • Sourced from process SOT-23 Mark C2 Base Emitter Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector current - Continuous TJ, Tstg Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value -32 -32 -500 -55 ~ +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units Off Characteristics V BR CBO V BR CEO V BR CES V BR EBO ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteristics IC = -10µA, IE = 0 IC = -2.0mA, IB = 0 IC = -10µA, IE = 0 IC = -10µA, IC = 0 VCB = -32V, IE = 0 VCB = -32V, IE = 0, TA = +100°C V -100 nA -10 µA DC Current Gain VCE = -5.0V, IC = -2.0mA VCE sat |
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