BC212LB_J35Z

BC212LB_J35Z Datasheet


BC212LB

Part Datasheet
BC212LB_J35Z BC212LB_J35Z BC212LB_J35Z (pdf)
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BC212LB

BC212LB

PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at collector currents to 100mA.
• Sourced from process

TO-92

Emitter Collector Base

Absolute Maximum Ratings* TC=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Value 50 60 5 100
- 55 ~ 150

NOTES These ratings are based on a maximum junction temperature of 150°C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Units V mA °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

BVCEO Collector-Emitter Breakdown Voltage

BVCBO Collector-Base Breakdown Voltage

BVEBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

On Characteristics*

IC = 2mA IC = 10µA IE = 10µA VCB = 30V VEB = 4V

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage VBE on Base-Emitter On Voltage Small Signal Characteristics

VCE = 5V, IC = 10µA VCE = 5V, IC = 2mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA
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Datasheet ID: BC212LB_J35Z 513148