BC184L
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BC184L_J35Z (pdf) |
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BC184L |
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BC184L_D27Z |
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BC184L BC184L Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V Min. • hFE = 130 Min. = 5.0V, IC = 100mA Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Dissipation Ta=25°C Note 2, 3 Junction Temperature Storage Temperature TO-92 Emitter Collector Base Value 45 30 5 500 350 150 - 55 ~ 150 Units V mA mW °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Min. BVCBO Collector-Base Voltage IC = 10µA BVCEO Collector-Emitter Voltage IC = 2mA BVEBO Emitter-Base Voltage IE = 10µA ICBO Collector Cut-off Current VCB = 30V IEBO Emitter Cut-off Current VEB = 3V DC Current Gain VCE = 5V, IC = 10µA VCE = 5V, IC = 100mA VCE sat Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VBE sat Base-Emitter Saturation Voltage |
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