VMMK-2203-TR2G

VMMK-2203-TR2G Datasheet


VMMK-2203 GHz E-pHEMT Wideband Amplifier in Wafer Level Package

Part Datasheet
VMMK-2203-TR2G VMMK-2203-TR2G VMMK-2203-TR2G (pdf)
PDF Datasheet Preview
VMMK-2203 GHz E-pHEMT Wideband Amplifier in Wafer Level Package

Data Sheet

The VMMK-2203 is an easy-to-use GaAs MMIC amplifier that offers excellent gain and noise figure from to 11 GHz. The input and output are matched to 50 Ω so no external matching is needed. Bias is supplied through a simple external choke and DC blocking network.

The wafer level package is small and ultra thin, yet can be handled and placed with standard 0402 pick and place assembly. This product is easy to use since it requires only a single positive DC voltage for bias and no matching coefficients are required for impedance matching to 50 Ω systems. WLP 0402, 1mm x 0.5mm x mm

Pin Connections Top View

Input

Output / Vdd
• 1 x mm Surface Mount Package
• Ultrathin 0.25mm
• Gain Block
• Ultra-wide Bandwidth
• 5V Supply
• RoHS6 + Halogen Free

Specifications 6GHz, 5V, 25mA Typ.
• Noise Figure 2.0dB typical
• Associated Gain 16.5dB
• Output IP3 +14dBm
• Output P1dB +5dBm
• Low Noise and Driver for Cellular/PCS and WCDMA Base Stations
• GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications
• & BWA systems
• WLL and MMDS Transceivers
• Point-to-Point Radio
• UWB
• Antennas

Input

Note “D” = Device Code “Y” = Month Code

Output / Vdd

Attention Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 40V ESD Human Body Model = 450V Refer to Avago Application Note A004R Electrostatic Discharge, Damage and Control.

Table Absolute Maximum Ratings [1]

Parameters/Condition

Unit

Supply Voltage RF Output [2]

Device Current [2]

Pin, max

CW RF Input Power RF Input [3]

Pdiss

Total Power Dissipation

Max channel temperature

Thermal Resistance [4]
°C/W

Notes Operation in excess of any of these conditions may result in permanent damage to this device. Bias is assumed DC quiescent conditions With the DC typical bias and RF applied to the device at board temperature Tb = 25°C Thermal resistance is measured from junction to board using IR method

Table DC and RF Specifications TA= 25°C, Frequency = 6 GHz, Vd = 5V, Zin = Zout = unless otherwise specified

Parameters/Condition

Unit

Device Current

NF[1]

Noise Figure

Ga [1]

Associated Gain

OIP3 [2,3]

Output 3rd Order Intercept

Output P-1dB[2]
Ordering Information

Part Number VMMK-2203-BLKG VMMK-2203-TR1G

Devices Per Container 100
5000

Container Antistatic Bag 7” Reel

Package Dimension Outline

A Note All dimensions are in mm

Reel Orientation

REEL

Die dimension:

Range

Unit

D - mm

E - mm

A - mm

Device Orientation

USER FEED DIRECTION 4 mm

USER FEED DIRECTION

CARRIER TAPE
•DY
•DY
•DY
•DY

TOP VIEW

Note “D” = Device Code ”Y” = Month Code
8 mm END VIEW

E F Note 2 W Bo Scale 5:1

SECTION

Tape Dimensions

Note 2

Note 1

T 5° Max

A R0.1
5° Max

Scale 5:1

SECTION

Unit mm

Symbol K1 Po P1 P2 Do D1 E F 10Po W T

Spec.

Ao = mm

Bo = mm

Notice 10 Sprocket hole pitch cumulative tolerance is ±0.1mm. Pocket position relative to sprocket hole measured as true position
of pocket not pocket hole. Ao & Bo measured on a place 0.3mm above the bottom of the
pocket to top surface of the carrier. Ko measured from a plane on the inside bottom of the pocket to
More datasheets: 65N472SBKCT | 65N472MBKCA | 62O472SWKCE | 62O472MBKCA | 62O102MBECA | 61V472SCMCT | 61V102MCECT | 61V471MCECT | 61V222MCHCT | 62O222MCHCA


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived VMMK-2203-TR2G Datasheet file may be downloaded here without warranties.

Datasheet ID: VMMK-2203-TR2G 520528