VMMK-2203 GHz E-pHEMT Wideband Amplifier in Wafer Level Package
Part | Datasheet |
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VMMK-2203-TR2G | VMMK-2203-TR2G (pdf) |
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VMMK-2203 GHz E-pHEMT Wideband Amplifier in Wafer Level Package Data Sheet The VMMK-2203 is an easy-to-use GaAs MMIC amplifier that offers excellent gain and noise figure from to 11 GHz. The input and output are matched to 50 Ω so no external matching is needed. Bias is supplied through a simple external choke and DC blocking network. The wafer level package is small and ultra thin, yet can be handled and placed with standard 0402 pick and place assembly. This product is easy to use since it requires only a single positive DC voltage for bias and no matching coefficients are required for impedance matching to 50 Ω systems. WLP 0402, 1mm x 0.5mm x mm Pin Connections Top View Input Output / Vdd • 1 x mm Surface Mount Package • Ultrathin 0.25mm • Gain Block • Ultra-wide Bandwidth • 5V Supply • RoHS6 + Halogen Free Specifications 6GHz, 5V, 25mA Typ. • Noise Figure 2.0dB typical • Associated Gain 16.5dB • Output IP3 +14dBm • Output P1dB +5dBm • Low Noise and Driver for Cellular/PCS and WCDMA Base Stations • GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications • & BWA systems • WLL and MMDS Transceivers • Point-to-Point Radio • UWB • Antennas Input Note “D” = Device Code “Y” = Month Code Output / Vdd Attention Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 40V ESD Human Body Model = 450V Refer to Avago Application Note A004R Electrostatic Discharge, Damage and Control. Table Absolute Maximum Ratings [1] Parameters/Condition Unit Supply Voltage RF Output [2] Device Current [2] Pin, max CW RF Input Power RF Input [3] Pdiss Total Power Dissipation Max channel temperature Thermal Resistance [4] °C/W Notes Operation in excess of any of these conditions may result in permanent damage to this device. Bias is assumed DC quiescent conditions With the DC typical bias and RF applied to the device at board temperature Tb = 25°C Thermal resistance is measured from junction to board using IR method Table DC and RF Specifications TA= 25°C, Frequency = 6 GHz, Vd = 5V, Zin = Zout = unless otherwise specified Parameters/Condition Unit Device Current NF[1] Noise Figure Ga [1] Associated Gain OIP3 [2,3] Output 3rd Order Intercept Output P-1dB[2] Ordering Information Part Number VMMK-2203-BLKG VMMK-2203-TR1G Devices Per Container 100 5000 Container Antistatic Bag 7” Reel Package Dimension Outline A Note All dimensions are in mm Reel Orientation REEL Die dimension: Range Unit D - mm E - mm A - mm Device Orientation USER FEED DIRECTION 4 mm USER FEED DIRECTION CARRIER TAPE •DY •DY •DY •DY TOP VIEW Note “D” = Device Code ”Y” = Month Code 8 mm END VIEW E F Note 2 W Bo Scale 5:1 SECTION Tape Dimensions Note 2 Note 1 T 5° Max A R0.1 5° Max Scale 5:1 SECTION Unit mm Symbol K1 Po P1 P2 Do D1 E F 10Po W T Spec. Ao = mm Bo = mm Notice 10 Sprocket hole pitch cumulative tolerance is ±0.1mm. Pocket position relative to sprocket hole measured as true position of pocket not pocket hole. Ao & Bo measured on a place 0.3mm above the bottom of the pocket to top surface of the carrier. Ko measured from a plane on the inside bottom of the pocket to |
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