BC184C_J35Z

BC184C_J35Z Datasheet


BC184C

Part Datasheet
BC184C_J35Z BC184C_J35Z BC184C_J35Z (pdf)
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BC184C BC184C BC184C
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BC184C

BC184C

Silicon NPN Small Signal Transistor Note 1
• BVCEO = 30V Min.
• hFE = 130 Min. = 5.0V, IC = 100mA

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Dissipation Ta=25°C Note 2, 3 Junction Temperature Storage Temperature

TO-92

Collector Base Emitter

Value 45 30 5 500 350 150
- 55 ~ 150

Units V mA
mW °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

Min.

BVCBO

Collector-Base Voltage

IC = 10µA

BVCEO

Collector-Emitter Voltage

IC = 2mA

BVEBO

Emitter-Base Voltage

IE = 10µA

ICBO

Collector Cut-off Current

VCB = 30V

IEBO

Emitter Cut-off Current

VEB = 4V

DC Current Gain

VCE = 5V, IC = 10µA

VCE = 5V, IC = 2mA

VCE = 5V, IC = 100mA

VCE sat

Collector-Emitter Saturation Voltage

IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA

VBE sat
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Datasheet ID: BC184C_J35Z 513140