BC184_J35Z
BC184_J35Z Datasheet
BC184 Silicon NPN Small Signal Transistor
| Part | Datasheet |
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BC184_J35Z |
BC184_J35Z (pdf) |
| Related Parts | Information |
|---|---|
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BC184 |
BC184 |
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BC184_D27Z |
BC184_D27Z |
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BC184_L34Z |
BC184_L34Z |
| PDF Datasheet Preview |
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| BC184 Silicon NPN Small Signal Transistor BC184 Silicon NPN Small Signal Transistor • BVCEO = 30V Min. • hFE = 130 Min. = 5.0V, IC = 100mA September 2007 TO-92 Collector Base Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current DC Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Value 30 45 5 100 -55 ~ +150 Units V mA °C Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB X Max. 350 125 357 Units mW/°C °C/W °C/W 2007 Fairchild Semiconductor Corporation BC184 Silicon NPN Small Signal Transistor Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO IEBO ICBO VCE sat VBE sat VBE on Cob fT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Emitter Cut-off Current Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current gain Bandwidth Product IC = 10uA IC = 2mA IE = 10uA VEB = 4V VCB = 30V VCE = 5V, IC = 10uA VCE = 5V, IC = 100mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 10V, f = 1MHz VCE = 5V, IC = 10mA, f = 100MHz Min. |
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