2N6519BU

2N6519BU Datasheet

2N6519

Part	Datasheet
2N6519BU	2N6519BU (pdf)

Related Parts	Information
2N6519TA	2N6519TA

PDF Datasheet Preview
2N6519 2N6519 High Voltage Transistor • Collector-Emitter Voltage VCEO= -300V • Collector Dissipation PC max =625mW PNP Epitaxial Silicon Transistor TO-92 Emitter Base Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25°C Junction Temperature TSTG Storage Temperature • Refer to 2N6520 for graphs Value -300 -300 -5 -500 -250 625 5 150 -55 ~ 150 Units V mA W mW/°C °C °C Electrical Characteristics Ta=25°C unless otherwise noted BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage VBE on fT Cob CEB tON Base-Emitter On Voltage * Current Gain Bandwidth Product Output Capacitance Emitter-Base Capacitance Turn On Time tOFF Turn Off Time * Pulse Test Pulse Duty Test Condition IC= -100µA, IE=0 IC= -1mA, IB=0 IE= -10µA, IC=0 VCB= -200V, IE=0 VEB= -4V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA VCE= -10V, IC= -100mA VCE= -20V, IC= -10mA, f=20MHz

PDF Datasheet Preview

2N6519
2N6519

High Voltage Transistor
• Collector-Emitter Voltage VCEO= -300V
• Collector Dissipation PC max =625mW

PNP Epitaxial Silicon Transistor

TO-92

Emitter Base Collector

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC IB PC

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25°C

Junction Temperature

TSTG

Storage Temperature
• Refer to 2N6520 for graphs

Value -300 -300
-5 -500 -250 625
5 150 -55 ~ 150

Units V mA W
mW/°C °C °C

Electrical Characteristics Ta=25°C unless otherwise noted

BVCBO BVCEO BVEBO ICBO IEBO hFE

Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain

VCE sat Collector-Emitter Saturation Voltage

VBE sat Base-Emitter Saturation Voltage

VBE on fT Cob CEB tON

Base-Emitter On Voltage * Current Gain Bandwidth Product Output Capacitance Emitter-Base Capacitance Turn On Time
tOFF

Turn Off Time
* Pulse Test Pulse Duty

Test Condition

IC= -100µA, IE=0

IC= -1mA, IB=0

IE= -10µA, IC=0

VCB= -200V, IE=0

VEB= -4V, IC=0

VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA

IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA IC= -50mA, IB= -5mA

IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA

VCE= -10V, IC= -100mA

VCE= -20V, IC= -10mA, f=20MHz

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived 2N6519BU Datasheet file may be downloaded here without warranties.

Datasheet ID: 2N6519BU 513016