2N6426_D74Z

2N6426_D74Z Datasheet


2N6426

Part Datasheet
2N6426_D74Z 2N6426_D74Z 2N6426_D74Z (pdf)
Related Parts Information
2N6426 2N6426 2N6426
2N6426_D26Z 2N6426_D26Z 2N6426_D26Z
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2N6426
2N6426

Discrete POWER & Signal Technologies

TO-92

NPN Darlington Transistor

This device is designed for applications requiring extremely high current gain at currents to A. Sourced from Process See MPSA14 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC TJ, Tstg

Collector Current - Continuous Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
2N6426 625 200

Units

V A °C

Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation
2N6426

NPN Darlington Transistor
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS
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Datasheet ID: 2N6426_D74Z 513013