2N6426_D74Z
2N6426_D74Z Datasheet
2N6426
| Part | Datasheet |
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2N6426_D74Z |
2N6426_D74Z (pdf) |
| Related Parts | Information |
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2N6426 |
2N6426 |
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2N6426_D26Z |
2N6426_D26Z |
| PDF Datasheet Preview |
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| 2N6426 2N6426 Discrete POWER & Signal Technologies TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to A. Sourced from Process See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N6426 625 200 Units V A °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation 2N6426 NPN Darlington Transistor continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS |
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