2N5952

2N5952 Datasheet

2N5952

Part	Datasheet
2N5952	2N5952 (pdf)

Related Parts	Information
2N5952_D75Z	2N5952_D75Z
2N5952_D74Z	2N5952_D74Z
2N5952_J35Z	2N5952_J35Z

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2N5952 2N5952 N-Channel RF Ampifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process TO-92 Absolute Maximum Ratings * TC=25°C unless otherwise noted Gate Source Drain Parameter Value Units Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR GSS Gate-Source Breakdown Voltage IGSS VGS off Gate-Source Cutoff Voltage On Characteristics VDS = 0, IG = -1.0µA VGS = -15V, VDS = 0 VDS = 15V, ID = 100nA IDSS Zero-Gate Voltage Drain Current * Small Signal Characteristics VDS = 15V, VGS = 0 Forward Transfer Conductance Output Conductance Ciss Input Capacitance Crss Noise Figure * Pulse Test Pulse Width 300ms, Duty Cycle VDS = 15V, VGS = 0, f = 1.0kHz VDS = 15V, VGS = 0, f = 100MHz VDS = 15V, VGS = 0, f = 1.0MHz VDS = 15V, VGS = 0, f = 1.0MHz VDS = 15V, RG = f = 1.0kHz Min. Typ. Max. Units

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2N5952
2N5952

N-Channel RF Ampifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process

TO-92

Absolute Maximum Ratings * TC=25°C unless otherwise noted

Gate Source Drain

Parameter

Value

Units

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

TJ, TSTG

Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR GSS Gate-Source Breakdown Voltage

IGSS

VGS off Gate-Source Cutoff Voltage

On Characteristics

VDS = 0, IG = -1.0µA VGS = -15V, VDS = 0 VDS = 15V, ID = 100nA

IDSS

Zero-Gate Voltage Drain Current *

Small Signal Characteristics

VDS = 15V, VGS = 0

Forward Transfer Conductance

Output Conductance

Ciss

Input Capacitance

Crss

Noise Figure
* Pulse Test Pulse Width 300ms, Duty Cycle

VDS = 15V, VGS = 0, f = 1.0kHz VDS = 15V, VGS = 0, f = 100MHz VDS = 15V, VGS = 0, f = 1.0MHz VDS = 15V, VGS = 0, f = 1.0MHz VDS = 15V, RG = f = 1.0kHz

Min. Typ. Max. Units

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Datasheet ID: 2N5952 513009