2N5555

2N5555 Datasheet

2N5555 N-Channel RF Amplifier

Part	Datasheet
2N5555	2N5555 (pdf)

Related Parts	Information
2N5555_D74Z	2N5555_D74Z

PDF Datasheet Preview
2N5555 N-Channel RF Amplifier May 2008 2N5555 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process TO-92 1 Gate Source Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C RqJC RqJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 25 -25 10 -55 ~ 150 Max. 350 125 357 Units V mA °C Units mW/°C °C/W °C/W 2007 Fairchild Semiconductor Corporation 2N5555 N-Channel RF Amplifier Electrical Characteristics* Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR GSS Gate-Source Breakdown Voltage IGSS VGS off Gate-Source Cut-off Voltage VGS f Gate-Source Forward Voltage On Characteristics IG = 10mA, VDS = 0 VGS = 15V, VDS = 0, T = 25°C VDS = 12V, ID = 10nA IG = 1.0mA *IDSS

PDF Datasheet Preview

2N5555 N-Channel RF Amplifier

May 2008
2N5555 N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process

TO-92 1 Gate Source Drain

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

VDG VGS IGF TJ, TSTG

Parameter

Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C.
2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics Ta=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

RqJC RqJA

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Value
25 -25 10 -55 ~ 150

Max.
350 125 357

Units

V mA °C

Units
mW/°C °C/W °C/W
2007 Fairchild Semiconductor Corporation
2N5555 N-Channel RF Amplifier

Electrical Characteristics* Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR GSS Gate-Source Breakdown Voltage

IGSS

VGS off

Gate-Source Cut-off Voltage

VGS f

Gate-Source Forward Voltage

On Characteristics

IG = 10mA, VDS = 0 VGS = 15V, VDS = 0, T = 25°C VDS = 12V, ID = 10nA IG = 1.0mA
*IDSS

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Datasheet ID: 2N5555 512999