2N5555_D74Z

2N5555_D74Z Datasheet


2N5555 N-Channel RF Amplifier

Part Datasheet
2N5555_D74Z 2N5555_D74Z 2N5555_D74Z (pdf)
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2N5555 2N5555 2N5555
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2N5555 N-Channel RF Amplifier

May 2008
2N5555 N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process

TO-92 1 Gate Source Drain

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

VDG VGS IGF TJ, TSTG

Parameter

Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C.
2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics Ta=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

RqJC RqJA

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Value
25 -25 10 -55 ~ 150

Max.
350 125 357

Units

V mA °C

Units
mW/°C °C/W °C/W
2007 Fairchild Semiconductor Corporation
2N5555 N-Channel RF Amplifier

Electrical Characteristics* Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR GSS Gate-Source Breakdown Voltage

IGSS

VGS off

Gate-Source Cut-off Voltage

VGS f

Gate-Source Forward Voltage

On Characteristics

IG = 10mA, VDS = 0 VGS = 15V, VDS = 0, T = 25°C VDS = 12V, ID = 10nA IG = 1.0mA
*IDSS
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Datasheet ID: 2N5555_D74Z 512999