2N5307_D74Z

2N5307_D74Z Datasheet

2N5307

Part	Datasheet
2N5307_D74Z	2N5307_D74Z (pdf)

Related Parts	Information
2N5307	2N5307

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2N5307 2N5307 NPN General Purpose Amplifier • This device designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from Process • See MPSA14 for characteristics. TO-92 Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TST Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value 40 12 -55 ~ +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V A °C 2002 Fairchild Semiconductor Corporation 2N5307 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics BV BR CEO BV BR CBO BV BR EBO ICBO Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current IEBO On Characteristics * IC = 10mA, IB = 0 IC = 0.1µA, IE = 0 IE = 0.1µA, IC = 0 VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 100°C VEB = 12V, IC = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage VBE on Base-Emitter On Voltage

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2N5307
2N5307

NPN General Purpose Amplifier
• This device designed for applications requiring extremely high current gain at currents to 1.0A.
• Sourced from Process
• See MPSA14 for characteristics.

TO-92

Emitter Collector Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TST

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Value 40 12
-55 ~ +150

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V A °C
2002 Fairchild Semiconductor Corporation
2N5307

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

BV BR CEO BV BR CBO BV BR EBO ICBO

Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current

IEBO

On Characteristics *

IC = 10mA, IB = 0 IC = 0.1µA, IE = 0 IE = 0.1µA, IC = 0 VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 100°C VEB = 12V, IC = 0

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage

VBE sat Base-Emitter Saturation Voltage

VBE on

Base-Emitter On Voltage

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Datasheet ID: 2N5307_D74Z 512683