2N3905TF
2N3905TF Datasheet
2N3905
| Part | Datasheet |
|---|---|
2N3905TF |
2N3905TF (pdf) |
| Related Parts | Information |
|---|---|
|
2N3905TAR |
2N3905TAR |
|
2N3905_D29Z |
2N3905_D29Z |
|
2N3905TFR |
2N3905TFR |
|
2N3905TA |
2N3905TA |
|
2N3905BU |
2N3905BU |
| PDF Datasheet Preview |
|---|
| 2N3905 2N3905 TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 200 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3905 625 200 Units V mA °C Units mW/°C °C/W °C/W 2001 Fairchild Semiconductor Corporation 2N3905 PNP General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V BR CEO |
| More datasheets: FOD8012R2 | 1143 | EMT090250-P5P-KH | BDW23TU | BDW23ATU | BDW23BTU | BDW23CTU | 2N3905TAR | 2N3905_D29Z | 2N3905TFR |
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