2N3859A

2N3859A Datasheet


2N3859A

Part Datasheet
2N3859A 2N3859A 2N3859A (pdf)
Related Parts Information
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2N3859A
2N3859A

NPN General Purpose Amplifier
• This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA.
• Sourced from Process
• See PN100 for characteristics.

NPN Epitaxial Silicon Transistor

TO-92

Emitter Collector Base

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TST

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Value 60 500
-55 ~ +150

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V mA °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

BV BR CEO Collector-Emitter Breakdown Voltage

BV BR CBO Collector-Base Breakdown Voltage

BV BR EBO Emitter-Base Breakdown Voltage

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

On Characteristics *

IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 18V, IE = 0 VEB = 4.0V, IC = 0

DC Current Gain

Small Signal Characteristics

VCE= 1.0V, IC = 1.0mA VCE= 1.0V, IC = 1.0mA
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Datasheet ID: 2N3859A 512670