2N3859A
2N3859A Datasheet
2N3859A
| Part | Datasheet |
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2N3859A |
2N3859A (pdf) |
| Related Parts | Information |
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2N3859A_D75Z |
2N3859A_D75Z |
| PDF Datasheet Preview |
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| 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process • See PN100 for characteristics. NPN Epitaxial Silicon Transistor TO-92 Emitter Collector Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TST Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value 60 500 -55 ~ +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics BV BR CEO Collector-Emitter Breakdown Voltage BV BR CBO Collector-Base Breakdown Voltage BV BR EBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current On Characteristics * IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 18V, IE = 0 VEB = 4.0V, IC = 0 DC Current Gain Small Signal Characteristics VCE= 1.0V, IC = 1.0mA VCE= 1.0V, IC = 1.0mA |
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