2N3820_D26Z

2N3820_D26Z Datasheet

2N3820

Part	Datasheet
2N3820_D26Z	2N3820_D26Z (pdf)

Related Parts	Information
2N3820	2N3820

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2N3820 2N3820 P-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from process TO-92 Drain Gate Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TSTG Storage Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ratings -20 10 -55 ~ 150 NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR GSS Gate-Source Breakdwon Voltage IGSS VGS off Gate-Source Cutoff Voltage On Characteristics IG = 10µA, VDS = 0 VGS = 10V, VDS = 0 VDS = -10V, ID = -10µA IDSS Zero-Gate Voltage Drain Current * VDS = -10V, VGS = 0 Small Signal Characteristics Forward Transfer Conductance Ciss Input Capacitance Crss * Pulse Test Pulse Width 300ms, Duty Cycle 2% VDS = -10V, VGS = 0, f = 1.0KHz VDS = -10V, VGS = 0, f = 1.0KHz VDS = -10V, VGS = 0, f = 1.0KHz Min. 20 Typ. Max. Units

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2N3820
2N3820

P-Channel General Purpose Amplifier
• This device is designed primarily for low level audio and general purpose applications with high impedance signal sources.
• Sourced from process

TO-92

Drain Gate Source

Epitaxial Silicon Transistor

Absolute Maximum Ratings* TC=25°C unless otherwise noted

Parameter

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

TSTG

Storage Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Ratings -20 10
-55 ~ 150

NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V mA °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR GSS Gate-Source Breakdwon Voltage

IGSS

VGS off Gate-Source Cutoff Voltage

On Characteristics

IG = 10µA, VDS = 0 VGS = 10V, VDS = 0 VDS = -10V, ID = -10µA

IDSS

Zero-Gate Voltage Drain Current * VDS = -10V, VGS = 0

Small Signal Characteristics

Forward Transfer Conductance

Ciss

Input Capacitance

Crss
* Pulse Test Pulse Width 300ms, Duty Cycle 2%

VDS = -10V, VGS = 0, f = 1.0KHz VDS = -10V, VGS = 0, f = 1.0KHz VDS = -10V, VGS = 0, f = 1.0KHz

Min. 20

Typ.

Max. Units

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Datasheet ID: 2N3820_D26Z 512668