2N3819_D74Z

2N3819_D74Z Datasheet

2N3819

Part	Datasheet
2N3819_D74Z	2N3819_D74Z (pdf)

Related Parts	Information
2N3819	2N3819
2N3819_D27Z	2N3819_D27Z

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2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process TO-92 Drain Gate Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Parameter Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current TSTG Storage Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ratings 25 -25 50 10 -55 ~ 150 NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR GSS Gate-Source Breakdwon Voltage IGSS VGS off Gate-Source Cutoff Voltage Gate-Source Voltage On Characteristics IG = 1.0µA, VDS = 0 VGS = -15V, VDS = 0 VDS = 15V, ID = 2.0nA VDS = 15V, ID = 200µA IDSS Zero-Gate Voltage Drain Current Small Signal Characteristics VDS = 15V, VGS = 0 gfs goss yfs Ciss Crss VDS = 15V, VGS = 0, f = 1.0KHz VDS= 15V, VGS = 0, f = 1.0KHz VDS= 15V, VGS = 0, f = 1.0KHz VDS = 15V, VGS = 0, f = 1.0KHz VDS = 15V, VGS = 0, f = 1.0KHz Min. 25 2000 1600 Typ. Max. Units

PDF Datasheet Preview

2N3819
2N3819

N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance.
• Sourced from process

TO-92

Drain Gate Source

Epitaxial Silicon Transistor

Absolute Maximum Ratings* TC=25°C unless otherwise noted

Parameter

Drain-Gate Voltage

Gate-Source Voltage

Drain Current

Forward Gate Current

TSTG

Storage Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Ratings 25 -25 50 10
-55 ~ 150

NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V mA °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR GSS Gate-Source Breakdwon Voltage

IGSS

VGS off Gate-Source Cutoff Voltage

Gate-Source Voltage

On Characteristics

IG = 1.0µA, VDS = 0 VGS = -15V, VDS = 0 VDS = 15V, ID = 2.0nA VDS = 15V, ID = 200µA

IDSS

Zero-Gate Voltage Drain Current

Small Signal Characteristics

VDS = 15V, VGS = 0
gfs goss yfs Ciss Crss

VDS = 15V, VGS = 0, f = 1.0KHz VDS= 15V, VGS = 0, f = 1.0KHz VDS= 15V, VGS = 0, f = 1.0KHz VDS = 15V, VGS = 0, f = 1.0KHz VDS = 15V, VGS = 0, f = 1.0KHz

Min. 25
2000 1600

Typ.

Max. Units

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Datasheet ID: 2N3819_D74Z 512667