FDS7764S

FDS7764S Datasheet


FDS7764S

Part Datasheet
FDS7764S FDS7764S FDS7764S (pdf)
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FDS7764S

September 2002

FDS7764S
30V N-Channel SyncFET

The FDS7764S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDS7764S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
• DC/DC converter
• Motor drives
• A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V
• Includes SyncFET Schottky body diode
• Low gate charge 25 nC typical
• High performance trench technology for extremely
low RDS ON and fast switching
• High power and current handling capability

SO8SO-8

G SS S

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS7764S

FDS7764S
13’’
5 6 7 8

Ratings
30 ±16 50 to +150
50 30

Tape width 12mm
4 3 2 1

Units
°C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS7764S

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = 1 mA

ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = V , VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

Forward Transconductance
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Datasheet ID: FDS7764S 514374