FDS7764S
FDS7764S Datasheet
FDS7764S
| Part | Datasheet |
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FDS7764S |
FDS7764S (pdf) |
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| FDS7764S September 2002 FDS7764S 30V N-Channel SyncFET The FDS7764S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDS7764S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • DC/DC converter • Motor drives • A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V • Includes SyncFET Schottky body diode • Low gate charge 25 nC typical • High performance trench technology for extremely low RDS ON and fast switching • High power and current handling capability SO8SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS7764S FDS7764S 13’’ 5 6 7 8 Ratings 30 ±16 50 to +150 50 30 Tape width 12mm 4 3 2 1 Units °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS7764S Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = V , VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance |
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