2N3702

2N3702 Datasheet

2N3702

Part	Datasheet
2N3702	2N3702 (pdf)

Related Parts	Information
2N3702_D75Z	2N3702_D75Z
2N3702_D27Z	2N3702_D27Z
2N3702_D26Z	2N3702_D26Z

PDF Datasheet Preview
2N3702 2N3702 PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process • See PN200 for Characteristics. TO-92 Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TST Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value -25 -40 -500 -55 ~ +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics BV BR CEO Collector-Emitter Breakdown Voltage BV BR CBO Collector-Base Breakdown Voltage BV BR EBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current On Characteristics * IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCB = -20V, IE = 0 VEB = -3.0V, IC = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage

PDF Datasheet Preview

2N3702
2N3702

PNP General Purpose Amplifier
• This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA.
• Sourced from Process
• See PN200 for Characteristics.

TO-92

Emitter Collector Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TST

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Value -25 -40 -500
-55 ~ +150

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V mA °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

BV BR CEO Collector-Emitter Breakdown Voltage

BV BR CBO Collector-Base Breakdown Voltage

BV BR EBO Emitter-Base Breakdown Voltage

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

On Characteristics *

IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCB = -20V, IE = 0 VEB = -3.0V, IC = 0

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage

VBE sat Base-Emitter Saturation Voltage

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Datasheet ID: 2N3702 512664