MRF9180R6

MRF9180R6 Datasheet

Document Number MRF9180 Rev. 10, 5/2006

Part	Datasheet
MRF9180R6	MRF9180R6 (pdf)

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance 880 MHz, 26 Volts, IDQ = 1400 mA IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Power 40 Watts Gain 17 dB 26% Channel Power kHz dBc in 30 kHz BW MHz dBc in 30 kHz BW • Capable of Handling 10:1 VSWR, 26 Vdc, 880 MHz, 170 Watts CW Output Power • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF9180R6 880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET CASE 375D-05, STYLE 1 NI-1230 Table Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table ESD Protection Characteristics Test Conditions Human Body Model Machine Model Symbol VDSS VGS PD Tstg TC TJ Value +65 388 to +150 200 Value Class 1 Minimum M1 Minimum Unit Vdc W/°C °C °C °C Unit °C/W Freescale Semiconductor, Inc., 2006, All rights reserved. RF Device Data Freescale Semiconductor MRF9180R6 1 ARCHIVE INFORMATION ARCHIVE INFORMATION Table Electrical Characteristics TC = 25°C unless otherwise noted Characteristic Off Characteristics 1 Zero Gate Voltage Drain Leakage Current VDS = 65 Vdc, VGS = 0 Vdc IDSS Zero Gate Voltage Drain Leakage Current VDS = 26 Vdc, VGS = 0 Vdc IDSS Gate-Source Leakage Current VGS = 5 Vdc, VDS = 0 Vdc IGSS On Characteristics Gate Threshold Voltage 1 VDS = 10 Vdc, ID = 300 uAdc Gate Quiescent Voltage 2 VDS = 26 Vdc, ID = 1400 mAdc

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ARCHIVE INFORMATION ARCHIVE INFORMATION

Freescale Semiconductor Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applications in 26 volt base station equipment.
• Typical CDMA Performance 880 MHz, 26 Volts, IDQ = 1400 mA IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Power 40 Watts Gain 17 dB 26% Channel Power kHz dBc in 30 kHz BW MHz dBc in 30 kHz BW
• Capable of Handling 10:1 VSWR, 26 Vdc, 880 MHz, 170 Watts CW Output Power
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

MRF9180R6
880 MHz, 170 W, 26 V LATERAL N-CHANNEL

RF POWER MOSFET

CASE 375D-05, STYLE 1 NI-1230

Table Maximum Ratings Rating

Drain-Source Voltage Gate-Source Voltage Total Device Dissipation TC = 25°C

Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table Thermal Characteristics

Characteristic Thermal Resistance, Junction to Case Table ESD Protection Characteristics

Test Conditions Human Body Model Machine Model

Symbol VDSS VGS PD

Tstg TC TJ

Value +65
388 to +150 200

Value

Class 1 Minimum M1 Minimum

Unit Vdc W/°C °C °C °C

Unit °C/W

Freescale Semiconductor, Inc., 2006, All rights reserved.

RF Device Data Freescale Semiconductor

MRF9180R6 1

ARCHIVE INFORMATION ARCHIVE INFORMATION

Table Electrical Characteristics TC = 25°C unless otherwise noted

Characteristic

Off Characteristics 1

Zero Gate Voltage Drain Leakage Current VDS = 65 Vdc, VGS = 0 Vdc

IDSS

Zero Gate Voltage Drain Leakage Current VDS = 26 Vdc, VGS = 0 Vdc

IDSS

Gate-Source Leakage Current VGS = 5 Vdc, VDS = 0 Vdc

IGSS

On Characteristics

Gate Threshold Voltage 1 VDS = 10 Vdc, ID = 300 uAdc

Gate Quiescent Voltage 2 VDS = 26 Vdc, ID = 1400 mAdc

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Datasheet ID: MRF9180R6 635616