MTFDCAE002SAJ-1M1
MTFDCAE002SAJ-1M1 Datasheet
MTFDCAE002SAJ MTFDCAE004SAJ MTFDCAE008SAJ MTFDCAE016SAJ
| Part | Datasheet |
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MTFDCAE002SAJ-1M1 |
MTFDCAE002SAJ-1M1 (pdf) |
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| Embedded USB Mass Storage Drive e230 Features Embedded USB Mass Storage Drive e230 MTFDCAE002SAJ MTFDCAE004SAJ MTFDCAE008SAJ MTFDCAE016SAJ • NAND Flash • Interface Universal Serial Bus USB Specification, MB/s 8GB and16GB • Reliability >1 million device hours mean time be- tween failure MTBF • Endurance useful operating life of at least 5 years under the following conditions 8760 power-on hours per year Active 100% of power-on hours Typical operating conditions2 2GB module 16 GB/day 4GB module 32 GB/day 8GB module 64 GB/day 16GB module 128 GB/day • Static and dynamic wear-leveling • 15-bit error correction code ECC • Password protection • Reliability reporting • Capacity unformatted 3 2GB, 4GB, 8GB, or 16GB • Form factor Standard 36.9mm x 26.6mm x 9.6mm • Voltage 5V ±5% • Operating temperature Commercial 0°C to +70°C Industrial to +85°C Typical transfer rate measured with H2BENCH Assumes that 70% of total usable drive capacity contains static files. 1GB = 1 billion bytes formatted capacity is less. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Embedded USB Mass Storage Drive e230 Features Part Numbering Information Micron’s RealSSD embedded USB drives are available in different configurations and densities. Visit for a list of valid part numbers. Figure 1 Part Number Chart MT FD C AE 002 S AJ -1 M 1 IT ES Micron Technology Product Family FD = Flash drive Drive Interface C = USB Drive Form Factor AE = Embedded USB 36.9mm x 26.6mm x 9.6mm Drive Density 002 = 2GB 004 = 4GB 008 = 8GB 016 = 16GB NAND Flash Type S = SLC Product Family AJ = Option J Production Status Blank = Production ES = Engineering sample MS = Mechanical sample Operating Temperature Range Blank = Commercial 0°C to +70°C IT = Industrial to +85°C 1 = 1st generation 2 = 2nd generation 3 = 3rd generation NAND Component M = 8Gb x8 3.3V N = 16Gb x8 3.3V |
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