MRF9085LR3

MRF9085LR3 Datasheet

Order this document by MRF9085/D

Part	Datasheet
MRF9085LR3	MRF9085LR3 (pdf)

Related Parts	Information
MRF9085LSR3	MRF9085LSR3

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9085/D The RF MOSFET Line RF Power Field Effect Transistors Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for amplifier applications in 26 volt base station equipment. • Typical CDMA Performance 880 MHz, 26 Volts, IDQ = 700 mA CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 20 Watts Power Gain dB Efficiency 28% Adjacent Channel Power 750 kHz dBc 30 kHz BW MHz dBc 30 kHz BW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, 26 Vdc, 880 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates Nominal. MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 880 MHz, 90 W, 26 V LATERAL RF POWER MOSFETs CASE STYLE 1 MRF9085 MAXIMUM RATINGS Rating Voltage Voltage Total Device Dissipation TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model MRF9085 MRF9085SR3/MRF9085LSR3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case CASE STYLE 1 MRF9085SR3, MRF9085LSR3 Symbol VDSS VGS PD Tstg TJ Value 65 +15 250 to +150 200 Class 1 Minimum M2 Minimum M1 Minimum Unit Vdc Watts W/°C °C °C Unit °C/W NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. MMoOtoTroOla,RInOc.L2A00R3 F DEVICE DATA

PDF Datasheet Preview

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF9085/D

The RF MOSFET Line

RF Power Field Effect Transistors

Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for amplifier applications in 26 volt base station equipment.
• Typical CDMA Performance 880 MHz, 26 Volts, IDQ = 700 mA CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 20 Watts Power Gain dB Efficiency 28% Adjacent Channel Power 750 kHz dBc 30 kHz BW MHz dBc 30 kHz BW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, 26 Vdc, 880 MHz, 90 Watts CW

Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

Nominal.

MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3
880 MHz, 90 W, 26 V LATERAL RF POWER MOSFETs

CASE STYLE 1 MRF9085

MAXIMUM RATINGS

Rating

Voltage

Voltage

Total Device Dissipation TC = 25°C Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

ESD PROTECTION CHARACTERISTICS Test Conditions

Human Body Model

Machine Model

MRF9085 MRF9085SR3/MRF9085LSR3

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

CASE STYLE 1

MRF9085SR3, MRF9085LSR3

Symbol VDSS VGS PD

Tstg TJ

Value 65
+15 250
to +150 200

Class 1 Minimum M2 Minimum M1 Minimum

Unit Vdc Watts W/°C °C °C

Unit °C/W

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

MMoOtoTroOla,RInOc.L2A00R3 F DEVICE DATA

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Datasheet ID: MRF9085LR3 635614