SRF4427 SRF4427G
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SRF4427G (pdf) |
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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE 215 631-9840 FAX 215 631-9855 RF AND MICROWAVE DISCRETE LOW POWER TRANSISTORS GENERAL RF AMPLIFIER APPLICATIONS • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain 20dB typ 200MHz SRF4427 SRF4427G * G Denotes RoHS Compliant, Pb Free Terminal Finish DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers and oscillators. ABSOLUTE MAXIMUM RATINGS Tcase = 25°C Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current Value Unit Thermal Data Total Device Dissipation TC = 25ºC Derate above 25ºC TSTG R Storage Temperature Thermal Resistance, Junction to Ambient -65 to + 150 Watts mW/ ºC ºC/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. ELECTRICAL SPECIFICATIONS Tcase = 25°C STATIC off Test Conditions BVCEO BVCES BVEBO ICBO STATIC on Collector-Emitter Breakdown Voltage IC = 10 mAdc, IB = 0 Collector-Base Breakdown Voltage IC = 5 mAdc, IE = 0 Emitter-Base Breakdown Voltage IE = 5 mAdc, IC = 0 Collector Cutoff Current VCB = Vdc Test Conditions DYNAMIC DC Current Gain VCE = 5 Vdc, IC = 150 mAdc Test Conditions FTAU Current-Gain Bandwidth Product IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz Output Capacitance |
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