MS1409
MS1409 Datasheet
The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization and diffused emitter ballast resistors provide superior long term reliability.
| Part | Datasheet |
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MS1409 |
MS1409 (pdf) |
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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE 215 631-9840 FAX 215 631-9855 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS HDWXUHV • 175 MHz • 28 VOLTS • POUT = W • GP = 10 dB MINIMUM • COMMON EMITTER CONFIGURATION ' 6&5,37,21: The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization and diffused emitter ballast resistors provide superior long term reliability. MS1409 Emitter Base Collector TO-39 25°&J Parameter VCBO Collector-base Voltage VCEO VEBO PDISS Collector-emitter Voltage Emitter-base Voltage Total Power Dissipation Collector Peak Current Junction Temperature TSTG Storage Temperature 7KHUPDO 'DWD RTH J-CASE Thermal Resistance Junction-case Value 65 40 200 -65 to 200 Unit ºC ºC °C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. l7FDVH 25°&J Test Conditions BVebo BVcbo BVceo Iceo HFE IE = mA IC = mA IC = 3 mA VCE = 30 V VCE = 5 V IC = 0 mA IE = 0 mA IS = 0 mA IC = 100 mA MS1409 Min. 65 40 --20 Value Typ. ----------- Max. Unit |
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