KSE5020AS

KSE5020AS Datasheet

KSE5020

Part	Datasheet
KSE5020AS	KSE5020AS (pdf)

Related Parts	Information
KSE5020S	KSE5020S

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KSE5020 KSE5020 • High Voltage, High Quality High Speed Switching tF=0.1µs • WIDE SOA NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current DC Collector Dissipation TC=25°C Junction Temperature Storage Temperature TO-126 Emitter 2.Collector 3.Base Value 800 500 7 3 6 1 30 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO VCEX sus Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage IC = 1mA, IE = 0 IC = 5mA, RBE =∞ IE = 1mA, IC = 0 IC = 1.5A, IB1=-IB2= 0.6A L = 2mH, Clamped ICBO IEBO hFE1 hFE2 VCE sat VBE sat Cob fT tON tS tF Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.3A VCE = 5V, IC = 1.5A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, f = 1MHz VCE = 10V, IC = 0.3A VCC = 200V 5IB1 = -2.5IB2=IC=2A RL = Min. 800 500 7 500 Typ. Max. Units V 10 µA 10 µA hFE Classification Classification hFE1 R 15 ~ 30 O 20 ~ 40 Y 30 ~ 50 2001 Fairchild Semiconductor Corporation Typical Characteristics IC[A], COLLECTOR CURRENT VBE sat ,VCE sat [V], SATURATION VOLTAGE

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KSE5020

KSE5020
• High Voltage, High Quality High Speed Switching tF=0.1µs
• WIDE SOA

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC ICP IB PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current DC Collector Dissipation TC=25°C Junction Temperature Storage Temperature

TO-126

Emitter 2.Collector 3.Base

Value 800 500
7 3 6 1 30 150 - 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO VCEX sus

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage

IC = 1mA, IE = 0 IC = 5mA, RBE =∞ IE = 1mA, IC = 0 IC = 1.5A, IB1=-IB2= 0.6A L = 2mH, Clamped

ICBO IEBO hFE1 hFE2 VCE sat VBE sat Cob fT tON tS tF

Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time

VCB = 500V, IE = 0

VEB = 5V, IC = 0

VCE = 5V, IC = 0.3A VCE = 5V, IC = 1.5A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, f = 1MHz VCE = 10V, IC = 0.3A VCC = 200V 5IB1 = -2.5IB2=IC=2A RL =

Min. 800 500
7 500

Typ.

Max.

Units V
10 µA
10 µA
hFE Classification

Classification hFE1

R 15 ~ 30

O 20 ~ 40

Y 30 ~ 50
2001 Fairchild Semiconductor Corporation

Typical Characteristics

IC[A], COLLECTOR CURRENT

VBE sat ,VCE sat [V], SATURATION VOLTAGE

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Datasheet ID: KSE5020AS 634255