MMA005AA

MMA005AA Datasheet

MMA005AA

Part	Datasheet
MMA005AA	MMA005AA (pdf)

PDF Datasheet Preview
MMA005AA 2-20GHz, 12.5dB Gain Low-Noise Wideband Distributed Amplifier Features • >16.5dBm P1dB with 1.9dB NF and 12.5dB gain at 10GHz • <2dB NF from 6-12GHz • Single supply voltage of +8V 50mA • Input and Output matched to 50Ω • 1.5mm x 2.82mm x 0.1mm die size Applications • Instrumentation • Electronic warfare • Microwave communications • Radar Gain & NF        Power & OIP3        Typical Performance CW, Typical Device, RF Probe TA = 25°C, VDD = 8V Parameter Frequency Small Signal Gain Noise Figure Output Power, P1dB Output Power, P3dB Output IP3 Drain Current Units GHz dB dBm mA 1 of 10 MMA005AA Table 1 Absolute Maximum Ratings, Not Simultaneous Parameter Drain Voltage VD Input Power PIN Channel Temperature TC Operating Ambient Temperature TA Storage Temperature Thermal Resistance, Channel to Die Backside 1 MTTF > 108 hours at TC = 150°C Rating +9 24 1501 -55 to +85 -65 to +150 Units V dBm °C °C °C °C/W Caution, ESD Sensitive Device Table 2 Specifications CW, 100% Test TA = 25°C, VDD = 8V Parameter IDD Small Signal Gain Output Power, P1dB 20GHz 20GHz Max 105 Units mA dB dBm RF Probe Measurement Set-Up With Reference Planes2 TO VDD 100nF CAPACITOR TO GROUND 100pF CAPACITOR TO GROUND RFOUT

PDF Datasheet Preview

MMA005AA
2-20GHz, 12.5dB Gain Low-Noise Wideband Distributed Amplifier

Features
• >16.5dBm P1dB with 1.9dB NF and
12.5dB gain at 10GHz
• <2dB NF from 6-12GHz
• Single supply voltage of +8V 50mA
• Input and Output matched to 50Ω
• 1.5mm x 2.82mm x 0.1mm die size

Applications
• Instrumentation
• Electronic warfare
• Microwave communications
• Radar

Gain & NF


    

Power & OIP3


    

Typical Performance CW, Typical Device, RF Probe TA = 25°C, VDD = 8V

Parameter

Frequency

Small Signal Gain

Noise Figure

Output Power, P1dB Output Power, P3dB Output IP3

Drain Current

Units GHz dB dBm mA
1 of 10

MMA005AA

Table 1 Absolute Maximum Ratings, Not Simultaneous

Parameter Drain Voltage VD Input Power PIN Channel Temperature TC Operating Ambient Temperature TA Storage Temperature Thermal Resistance, Channel to Die Backside 1 MTTF > 108 hours at TC = 150°C

Rating +9 24 1501
-55 to +85 -65 to +150

Units V
dBm °C °C °C °C/W

Caution, ESD Sensitive Device

Table 2 Specifications CW, 100% Test TA = 25°C, VDD = 8V

Parameter IDD Small Signal Gain Output Power, P1dB
20GHz
20GHz

Max 105

Units mA dB dBm

RF Probe Measurement Set-Up With Reference Planes2

TO VDD
100nF CAPACITOR TO GROUND
100pF CAPACITOR TO GROUND

RFOUT

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Datasheet ID: MMA005AA 649061