APT20M45BVRG

APT20M45BVRG Datasheet

APT20M45BVR G

Part	Datasheet
APT20M45BVRG	APT20M45BVRG (pdf)

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APT20M45BVR G 200V, 56A, POWER MOS APT20M45BVR G POWER MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout. TO-247 D3 • Faster switching • Lower Leakage • 100% Avalanche tested • Popular TO-247 Package • RoHS compliant Absolute Maximum Ratings Symbol Parameter All Ratings TC = 25°C unless otherwise Ratings Unit VDSS ID IDM VGS VGSM Drain Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor Volts 56 Amps ±30 Volts ±40 Watts W/C° TJ, TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature for Soldering from Case for 10 Seconds Avalanche Current 1 Repetitive and Non-Repatitive Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 56 30 1300 °C Amps Static Characteristics TJ = 25°C unless otherwise Symbol Parameter BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA ID on On State Drain Current 2 VDS > ID on x RDS on Max, VGS = 10V RDS on Drain-Source On-State Resistance 2 VGS = 10V, I D[Cont.] IDSS Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Collector Current VGS = VDSS, VGS = 0V, TC = 125°C IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V VGS th Gate Threshold Voltage VDS = VGS, ID = 1.0mA Typ Max 25 250 ±100 4

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APT20M45BVR G
200V, 56A,

POWER MOS

APT20M45BVR G

POWER MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout.

TO-247 D3
• Faster switching
• Lower Leakage
• 100% Avalanche tested
• Popular TO-247 Package
• RoHS compliant

Absolute Maximum Ratings Symbol Parameter

All Ratings TC = 25°C unless otherwise

Ratings

Unit

VDSS ID IDM VGS

VGSM

Drain Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor

Volts
56 Amps
±30 Volts
±40

Watts

W/C°

TJ, TSTG TL IAR EAR EAS

Operating and Storage Junction Temperature Range Lead Temperature for Soldering from Case for 10 Seconds Avalanche Current 1 Repetitive and Non-Repatitive Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 56 30 1300
°C Amps

Static Characteristics

TJ = 25°C unless otherwise

Symbol Parameter

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA

ID on

On State Drain Current 2 VDS > ID on x RDS on Max, VGS = 10V

RDS on

Drain-Source On-State Resistance 2 VGS = 10V, I D[Cont.]

IDSS

Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Collector Current VGS = VDSS, VGS = 0V, TC = 125°C

IGSS

Gate-Source Leakage Current VGS = ±30V, VDS = 0V

VGS th

Gate Threshold Voltage VDS = VGS, ID = 1.0mA

Typ Max
25 250
±100 4

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Datasheet ID: APT20M45BVRG 648640