MMA001AA

MMA001AA Datasheet

MMA001AA

Part	Datasheet
MMA001AA	MMA001AA (pdf)

PDF Datasheet Preview
MMA001AA DC-22GHz, 16dB Gain Low-Noise Wideband Distributed Amplifier Features • Excellent combination of wide bandwidth, low noise and high associated gain • 1.7dB NF with >15.5dB gain at 10GHz • Output IP3 ~26-29dBm • Input and output matched to 50Ω • 100% DC and RF tested • Chip size 2.82mm x 1.50mm x 0.1mm Applications • Instrumentation • Electronic warfare • Microwave communications • Radar Gain & NF         Power & OIP3         Typical Performance CW, Typical Device, RF Probe TA = 25°C, VDD = 8V, IDD = 60mA1 Parameter Small Signal Gain DC - 6GHz 15 6 - 18GHz 16 18 - 22GHz 17 Units dB Noise Figure Output Return Loss Output Power, P1dB Output Power P3dB Output IP3 1 Adjust VGG to set IDD = 60mA, typical value is -0.5V. Recommend IDD ~ 45mA for improved stability down to -55°C 1 of 12 MMA001AA Table 1 Absolute Maximum Ratings, Not Simultaneous Parameter Drain Voltage VDD Gate Voltage VGG Input Power PIN Channel Temperature TC Operating Ambient Temperature TA Storage Temperature Thermal Resistance, Channel to Die Backside RTH 2 MTTF > 108 hours at TC = 150°C Rating +9 -2 to 0 20 1502 -55 to +85 -65 to +150 40 Units V dBm °C °C °C °C/W Caution, ESD Sensitive Device Table 2 Specifications CW, 100% Test TA = 25°C, VDD = 8V, IDD = 60mA3 Parameter Frequency Small Signal Gain 20GHz

PDF Datasheet Preview

MMA001AA

DC-22GHz, 16dB Gain Low-Noise Wideband Distributed Amplifier

Features
• Excellent combination of wide bandwidth,
low noise and high associated gain
• 1.7dB NF with >15.5dB gain at 10GHz
• Output IP3 ~26-29dBm
• Input and output matched to 50Ω
• 100% DC and RF tested
• Chip size 2.82mm x 1.50mm x 0.1mm

Applications
• Instrumentation
• Electronic warfare
• Microwave communications
• Radar

Gain & NF



    

Power & OIP3



    

Typical Performance CW, Typical Device, RF Probe TA = 25°C, VDD = 8V, IDD = 60mA1

Parameter Small Signal Gain

DC - 6GHz 15
6 - 18GHz 16
18 - 22GHz 17

Units dB

Noise Figure

Output Return Loss

Output Power, P1dB Output Power P3dB Output IP3
1 Adjust VGG to set IDD = 60mA, typical value is -0.5V. Recommend IDD ~ 45mA for improved stability down to -55°C
1 of 12

MMA001AA

Table 1 Absolute Maximum Ratings, Not Simultaneous

Parameter Drain Voltage VDD Gate Voltage VGG

Input Power PIN Channel Temperature TC Operating Ambient Temperature TA Storage Temperature Thermal Resistance, Channel to Die Backside RTH 2 MTTF > 108 hours at TC = 150°C

Rating +9
-2 to 0
20 1502 -55 to +85 -65 to +150 40

Units V
dBm °C °C °C °C/W

Caution, ESD Sensitive Device

Table 2 Specifications CW, 100% Test TA = 25°C, VDD = 8V, IDD = 60mA3

Parameter

Frequency

Small Signal Gain
20GHz

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Datasheet ID: MMA001AA 649058